Datasheet HSMS-286C-TR1G - Avago Technologies Даташит Диод, Шоттки, MICROWAVE — Даташит
Наименование модели: HSMS-286C-TR1G
Купить HSMS-286C-TR1G на РадиоЛоцман.Цены — от 36 до 982 ₽ 16 предложений от 10 поставщиков AVAGO TECHNOLOGIES HSMS-286C-TR1G RF Schottky Diode, Detector, Dual Series, 4 V, 1 mA, 350 mV, 0.25 pF, SOT-323 | |||
| HSMS-286C-TR1G Avago Technologies | 36 ₽ | ||
| HSMS-286C-TR1G Broadcom | 59 ₽ | ||
| HSMS-286C-TR1G Broadcom | от 982 ₽ | ||
| HSMS-286C-TR1G Broadcom | по запросу | ||
Подробное описание
Производитель: Avago Technologies
Описание: Диод, Шоттки, MICROWAVE
Скачать Data SheetКраткое содержание документа:
HSMS-286x Series
Surface Mount Microwave Schottky Detector Diodes
Data Sheet
Description
Avago's HSMS286x family of DC biased detector diodes have been designed and optimized for use from 915 MHz to 5.8 GHz.
They are ideal for RF/ID and RF Tag applications as well as large signal detection, modulation, RF to DC conversion or voltage doubling. Available in various package configurations, this family of detector diodes provides low cost solutions to a wide variety of design problems. Avago's manufacturing techniques assure that when two or more diodes are mounted into a single surface mount package, they are taken from adjacent sites on the wafer, assuring the highest possible degree of match.
Спецификации:
- Diode Configuration: Dual Series Connection
- Прямой ток максимальный: 1 мА
- Forward Voltage VF Max: 350 мВ
- Capacitance Ct: 0.25 пФ
- Тип корпуса: SOT-323
- Количество выводов: 3
- SVHC: No SVHC (15-Dec-2010)
- Diode Type: RF Schottky
- Forward Current If(AV): 100 мА
- Forward Voltage: 350 мВ
- Pin Configuration: c
- Repetitive Reverse Voltage Vrrm Max: 4 В
- Reverse Voltage Vr Max: 4 В
- Ширина ленты: 8.0 мм
- Способ монтажа: SMD
- Thermal Capacitance Ct: 0.3 пФ
- Breakdown Voltage Vbr: 4 В
- SMD Marking: T2
RoHS: есть
Варианты написания:
HSMS286CTR1G, HSMS 286C TR1G
