Datasheet ON Semiconductor MMBV3700LT1G — Даташит

MMBV3700LT1G
High Voltage Silicon Pin
Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general-purpose switching
circuits. They are supplied in a cost-effective plastic package for
economical, high-volume consumer and industrial requirements.
They are also available in surface mount. http://onsemi.com
SOT-23 Features
1
Anode Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for 3
Cathode Optimum Reliability Low Series Resistance @ 100 MHz -MARKING
DIAGRAM RS = 0.7 W (Typ) @ IF = 10 mA Reverse Breakdown Voltage = 200 V (Min) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant 3
4R M G
G 1 Rating 1 2 MAXIMUM RATINGS
Symbol Value Unit Reverse Voltage VR 200 V Forward Power Dissipation
@ TA = 25В°C
Derate above 25В°C PD 200
2.8 mW
mW/В°C Junction Temperature TJ +125 В°C Storage Temperature Range Tstg -55 to +150 В°C Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the …