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Datasheet ON Semiconductor MMBV3700LT1G

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  High Voltage Silicon PIN Diodes
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  MMBV3700LT1G
  High Voltage Silicon Pin
  Diodes
  These devices are designed primarily for VHF band switching
  applications but are also suitable for use in general-purpose switching
  circuits. They are supplied in a cost-effective plastic package for
  economical, high-volume consumer and industrial requirements.
  They are also available in surface mount. http://onsemi.com
  SOT-23 Features
  1
  Anode Long Reverse Recovery Time trr = 300 ns (Typ) Rugged PIN Structure Coupled with Wirebond Construction for 3
  Cathode Optimum Reliability Low Series Resistance @ 100 MHz -MARKING
  DIAGRAM RS = 0.7 W (Typ) @ IF = 10 mA Reverse Breakdown Voltage = 200 V (Min) These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
  Compliant 3
  4R M G
  G 1 Rating 1 2 MAXIMUM RATINGS
  Symbol Value Unit Reverse Voltage VR 200 V Forward Power Dissipation
  @ TA = 25В°C
  Derate above 25В°C PD 200
  2.8 mW
  mW/В°C Junction Temperature TJ +125 В°C Storage Temperature Range Tstg -55 to +150 В°C Stresses exceeding Maximum Ratings may damage the device. Maximum
  Ratings are stress ratings only. Functional operation above the Recommended
  Operating Conditions is not implied. Extended exposure to stresses above the ...

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Diodes & Rectifiers > Small Signal Switching Diodes

• Серия: MMBV3700L (2)
• MMBV3700LT1 MMBV3700LT1G

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