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Производитель:International Rectifier
Семейство:IRFH4257D
Серия:IRFH4257DPbF
Модель:IRFH4257DTRPbF

Сдвоенный мощный MOSFET семейства FastIRFET в улучшенных корпусах PQFN размером 4 × 5 мм

Datasheets

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    FastIRFETTM IRFH4257DPbF
    HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.70 9.7 25 Q2 25 1.80 23 25 V m nC A Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (9.7nC typical) Low RDSON synchronous MOSFET (<1.8m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number IRFH4257DPbF Dual PQFN 5mm x 4mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Orderable Part Number IRFH4257DTRPbF Q1 Max. Q2 Max. ± 20 68 111 54 88 25 120 25 16 0.20 25 375 28 18 0.22 W W/°C °C Q2 Max. 4.5 26 40 27 Units °C/W Units V Standard Pack Form Quantity Tape and Reel 4000 Absolute Maximum Ratings VGS ID @ TC = 25°C ID @ TC = 70°C ID @ TC = 25°C IDM PD @TC = 25°C PD @TC = 70°C TJ TSTG Thermal Resistance Parameter RJC (Bottom) Junction-to-Case Junction-to-Case RJC (Top) Junction-to-Ambient RJA Junction-to-Ambient RJA (<10s) Notes through are on page 12 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Parameter Gate-to-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V (Source Bonding Technology Limited) Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Q1 Max. 5.0 33 45 30 A -55 to + 150 September 15, 2014 Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Breakdown Voltage Temp. Coefficient Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Min. Typ. 25 ­­­ 25 ­­­ ­­­ 22 ­­­ 22 ­­­ 2.7 ­­­ 1.1 ­­­ 3.7 ­­­ 1.4 1.1 1.6 1.1 1.6 ­­­ -5.4 ­­­ -5.3 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 100 ­­­ 138 ­­­ ­­­ 9.7 ­­­ 23 ­­­ 2.4 ­­­ 5.1 ­­­ 1.2 ­­­ 2.6 ­­­ 3.4 ­­­ 7.6 ­­­ 2.7 ­­­ 7.7 ­­­ 4.6 ­­­ 10.2 ­­­ 10 ­­­ 25 ­­­ 1.4 ­­­ 0.7 ­­­ 8.2 ­­­ 12 ­­­ 47 ­­­ 51 ­­­ 12 ­­­ 20 ­­­ 20 ­­­ 25 ­­­ 1321 ­­­ 3161 ­­­ 365 ­­­ 965 ­­­ 101 ­­­ 237 IRFH4257DPbF Max. Units Conditions ­­­ VGS = 0V, ID = 250µA V ­­­ VGS = 0V, ID = 1.0mA ­­­ Reference to 25°C, ID = 1.0mA mV/°C ­­­ Reference to 25°C, ID = 10mA 3.4 VGS = 10V, ID = 25A 1.4 VGS = 10V, ID = 25A m 4.7 VGS = 4.5V, ID = 25A 1.8 VGS = 4.5V, ID = 25A 2. ...

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FastIRFETTM IRFH4257DPbF
HEXFET® Power MOSFET Q1 VDSS RDS(on) max (@VGS = 4.5V) Qg (typical) ID (@TC = 25°C) 25 4.70 9.7 25 Q2 25 1.80 23 25 V m nC A Applications Control and Synchronous MOSFETs for synchronous buck converters Dual PQFN 5X4 mm Features Control and synchronous MOSFETs in one package Low charge control MOSFET (9.7nC typical) Low RDSON synchronous MOSFET (<1.8m) Intrinsic Schottky Diode with Low Forward Voltage on Q2 RoHS Compliant, Halogen-Free MSL1, Industrial Qualification Base part number IRFH4257DPbF Dual PQFN 5mm x 4mm Package Type Benefits Increased power density Lower switching losses results in Lower conduction losses Lower Switching Losses Environmentally friendlier Increased reliability Orderable Part Number IRFH4257DTRPbF Q1 Max. Q2 Max. ± 20 68 111 54 88 25 120 25 16 0.20 25 375 28 18 0.22 W W/°C °C Q2 Max. 4.5 26 40 27 Units °C/W Units V Standard Pack Form Quantity Tape and Reel 4000 Absolute Maximum Ratin...

  • Серия: IRFH4257DPbF (1)
    • IRFH4257DTRPbF
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