AON6590
40V N-Channel MOSFET General Description Trench Power MV MOSFET technology Low RDS(ON) Low Gate Charge Optimized for fast-switching applications RoHS and Halogen-Free Compliant Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 100A < 0.99m < 1.5m Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN5x6
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1 2 3 4 Top View D 8 7 6 5 G S PIN1 PIN1 Orderable Part Number
AON6590 Package Type
DFN 5x6 Form
Tape & Reel Minimum Order Quantity
3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current Avalanche energy VDS Spike Power Dissipation B Power Dissipation A
C C Symbol VDS VGS TC=25°C TC=100°C TA=25°C TA=70°C L=0.3mH 10µs TC=25°C TC=100°C TA=25°C TA=70°C
C Maximum 40 ±20 100 100 400 67 54 65 634 48 208 83 7.3 4.7 -55 to 150 Units V V A ID IDM IDSM IAS EAS VSPIKE PD PDSM TJ, TSTG A A mJ V W W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol
t 10s Steady-State Steady-State RJA RJC Typ 14 40 0.45 Max 17 50 0.6 Units °C/W °C/W °C/W Rev.3.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V TJ=55°C VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125°C 1.3 1.8 0.78 1.17 1.15 100 0.66 1 100 8320 VGS=0V, VDS=20V, f=1MHz f=1MHz 0.5 1438 85 1.15 100 VGS=10V, VDS=20V, ID=20A 45 25 7 19 VGS=10V, VDS=20V, RL=1.0, RGEN=3 IF=20A, dI/dt=400A/µs 7 69 10 26 83 1.8 Min 40 1 5 ±100 2.3 0.99 1.55 1.5 Typ Max Units V µA nA V m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Input Capacitance Ciss Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Bod …
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