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Производитель:Diodes
Серия:DMN31D5UFZ
Модель:DMN31D5UFZ-7B

30 В n-канальный  ультраминиатюрный малосигнальный MOSFET

Datasheets

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    DMN31D5UFZ
    N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
    V(BR)DSS RDS(ON) max 1.5 @ VGS = 4.5V ID max TA = +25°C Features and Benefits 0.22A Low Package Profile, 0.42mm Maximum Package Height 0.62mm x 0.62mm Package Footprint Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT 30V 2.0 @ VGS = 2.5V 3.0 @ VGS = 1.8V 4.5 @ VGS = 1.5V Description
    This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X2-DFN0606-3 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ­ NiPdAu over Copper leadframe Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) Applications General Purpose Interfacing Switch Power Management Functions Analog Switch ESD PROTECTED Bottom View Equivalent Circuit Top View Package Pin Configuration Ordering Information (Note 4)
    Part Number DMN31D5UFZ-7B
    Notes: Case X2-DFN0606-3 Packaging 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated's definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information R6 = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMN31D5UFZ
    Document number: DS36843 Rev. 2 - 2 1 of 6 www.diodes.com June 2014
    © Diodes Incorporated DMN31D5UFZ Maximum Ratings (@TA = +25°C, unless otherwise specified.)
    Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 5) Steady State TA = +25°C TA = +85°C Symbol VDSS VGSS ID IDM Value 30 ±12 220 150 500 Units V V mA mA NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
    Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Operating and Storage Temperature Range Steady state Steady state Symbol PD R ...

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Классификация производителя

Discrete MOSFETs MOSFET Master Table N Channel N Channel 30V

Варианты написания: DMN31D5UFZ7B, DMN31D5UFZ 7B

Выписка из документа:
DMN31D5UFZ
N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary
V(BR)DSS RDS(ON) max 1.5 @ VGS = 4.5V ID max TA = +25°C Features and Benefits 0.22A Low Package Profile, 0.42mm Maximum Package Height 0.62mm x 0.62mm Package Footprint Low On-Resistance Very Low Gate Threshold Voltage, 1.0V max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) NEW PRODUCT ADVANCED INFORMATION NEW PRODUCT 30V 2.0 @ VGS = 2.5V 3.0 @ VGS = 1.8V 4.5 @ VGS = 1.5V Description
This MOSFET has been designed to minimize the on-state resistance (RDS(ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: X2-DFN0606-3 Case Material: Molded Plastic, "Green" Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish ­ NiPdAu over Copper leadframe Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate)...

  • Серия: DMN31D5UFZ (1)
    • DMN31D5UFZ-7B

На английском языке: Datasheet Diodes DMN31D5UFZ-7B

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