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NXP PMEG6020ELRX

Производитель:NXP
Серия:PMEG6020ELR
Модель:PMEG6020ELRX

60 В, 2 А диод Шоттки с низким током утечки

Datasheets

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    PMEG6020ELR
    3 June 2014 SO D 123 W 60 V, 2 A low leakage current Schottky barrier rectifier Product data sheet 1. General description
    Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) 2 A Reverse voltage: VR 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj 175 °C 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power supply Reverse polarity protection Low power consumption applications 4. Quick reference data
    Table 1. Symbol IF(AV) VR VF IR Quick reference data Parameter average forward current reverse voltage forward voltage reverse current Conditions = 0.5; f = 20 kHz; Tsp 160 °C; square wave Tj = 25 °C IF = 2 A; Tj = 25 °C VR = 60 V; tp 300 µs; 0.02; Tj = 25 °C; pulsed 690 90 60 760 300 V mV nA Min Typ Max 2 Unit A Scan or click this QR code to view the latest information for this product NXP Semiconductors PMEG6020ELR
    60 V, 2 A low leakage current Schottky barrier rectifier 5. Pinning information
    Table 2. Pin 1 2 Pinning information Symbol Description K A cathode[1] anode Simplified outline
    1 2 Graphic symbol
    1 2
    sym001 SOD123W
    The marking bar indicates the cathode. [1] 6. Ordering information
    Table 3. Ordering information Package Name PMEG6020ELR SOD123W Description plastic surface mounted package; 2 leads Version SOD123W Type number 7. Marking
    Table 4. Marking codes Marking code K2 Type number PMEG6020ELR PMEG6020ELR All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 3 June 2014 2 / 15 NXP Semiconductors PMEG6020ELR
    60 V, 2 A low leakage current Schottky barrier rectifier 8. Limiting values
    Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF IF(AV) Parameter reverse voltage forward current average forward current Conditions Tj = 25 °C Tsp = 155 °C; = 1 = 0.5; f = 20 kHz; Tamb 90 °C; square wave = 0.5; f = 20 kHz; Tsp 160 °C; square wave IFSM Ptot non-repetitive peak forward current total power dissipation tp = 8 ms; Tj(init) = 25 °C; square wave Tamb 25 °C
    [2] [3] [1] [1] Min -55 -65 Max 60 2.83 2 2 50 680 1150 2140 175 175 175 Unit V A A A A mW mW mW °C °C °C Tj Tamb Tstg junction temperature ambien ...

Цены

    SOD123/60 V, 2 A low leakage current Schottky barrier rectifier
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Классификация производителя

  • Diodes > Medium power Schottky diodes ≥ 200 mA

Выписка из документа:
PMEG6020ELR
3 June 2014 SO D 123 W 60 V, 2 A low leakage current Schottky barrier rectifier Product data sheet 1. General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Average forward current: IF(AV) 2 A Reverse voltage: VR 60 V Extremely low leakage current Low forward voltage High power capability due to clip-bonding technology Small and flat lead SMD plastic package AEC-Q101 qualified High temperature Tj 175 °C 3. Applications Low voltage rectification High efficiency DC-to-DC conversion Switch mode power sup...

На английском языке: Datasheet NXP PMEG6020ELRX

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