Радиолоцман Электроника en
расширенный поиск +
  

Datasheet International Rectifier IRF530NPBF

International Rectifier IRF530NPBF

Производитель:International Rectifier
Серия:IRF530NPBF
Модель:IRF530NPBF

100 V Single N-Channel HEXFET Power MOSFET in a TO-220AB package. IRF530N

Datasheets

  • Скачать » Datasheet, PDF, 188 Кб
    Выписка из документа ↓
    PD - 94962 IRF530NPbF
    l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET
    D VDSS = 100V RDS(on) = 90m G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. Description TO-220AB Absolute Maximum Ratings
    Parameter
    ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max.
    17 12 60 70 0.47 ± 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) 10 lbf in (1.1N m) Units
    A W W/°C V A mJ V/ns °C Thermal Resistance
    Parameter
    RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Typ.
    ­­­ 0.50 ­­­ Max.
    2.15 ­­­ 62 Units
    °C/W www.irf.com 1
    01/30/04 IRF530NPbF
    Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
    V(BR)DSS
    V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche Energy Min. 100 ­­­ ­­­ 2.0 12 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ Typ. ­­­ 0.11 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 9.2 22 35 25 4.5 7.5 ­­­ 920 ­­­ 130 ­­­ 19 ­­­ 340 ...

Цены

    IRF530NPBF на РадиоЛоцман.Цены — от 11,53 до 53,53 руб.
    Исполнение: TO-220AB. IRF530N PBF MOSFET, N, 100V, 17A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:100V; Current, Id Cont:15A; Resistance, Rds...
    Цена IRF530NPBF
    ПоставщикПроизводительНаименованиеЦена
    AliExpress5 ШТ. бесплатная доставка IRF530N IRF530 IRF530NPBF TO-220 MOSFET MOSFT 100 В 17A 90 мом 24.7nC новый оригинальный11,53 руб.
    ЭлрусInfineonIRF530NPBF16,27 руб.
    ТерраэлектроникаInfineonIRF530NPBFот 18,80 руб.
    ПМ ЭлектрониксInfineonIRF530NPBFот 44,68 руб.
    Океан ЭлектроникиInternational RectifierIRF530NPBF-IRпо запросу
    Все 23 предложений от 16 поставщиков »

Выписка из документа:
PD - 94962 IRF530NPbF
l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET® Power MOSFET
D VDSS = 100V RDS(on) = 90m G S ID = 17A Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This...

  • Серия: IRF530NPBF (1)
    • IRF530NPBF

На английском языке: Datasheet International Rectifier IRF530NPBF

Срезы ↓
Датчики влажности и температуры ДВТ-03
Цена: от 3 168 руб.
Доставка: Россия и страны СНГ
DIY настольный 3D принтер
Цена: 163 $ (9500 руб.)
Промо-акция, последняя скидка
Очки с подсветкой и сменными окулярами
Цена: от 8 $ (477 руб.)
Бесплатная доставка: Весь мир
радиолоцман вконтакте радиолоцман одноклассники радиолоцман facebook радиолоцман twitter радиолоцман google плюс