Радиолоцман Электроника en
расширенный поиск +
  

Datasheet Vishay SI8410DB-T2-E1

Vishay SI8410DB-T2-E1

Производитель:Vishay
Серия:Si8410DB
Модель:SI8410DB-T2-E1

N-Channel 20 V (D-S) MOSFET

Datasheets

  • Скачать » Datasheet, PDF, 159 Кб
    Выписка из документа ↓
    Si8410DB
    www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET
    PRODUCT SUMMARY
    VDS (V) RDS(on) () MAX. 0.037 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.047 at VGS = 1.8 V 0.068 at VGS = 1.5 V ID (A) a 5.7 5.4 5.0 4.2 5.9 nC Qg (TYP.) FEATURES TrenchFET® power MOSFET Ultra small 1 mm x 1 mm maximum outline Ultra-thin 0.54 mm maximum height Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT® 1 x 1 0 841xx x
    m 1m Backside View
    1 D 3 D 2 APPLICATIONS Load switch Power management High speed switching
    1 G D Marking Code: 8410 Ordering Information: Si8410DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
    PARAMETER Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current (TJ = 150 °C) TA = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 s) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Package Reflow Conditions e VPR IR/Convection TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT 20 ±8 5.7 a 4.5 a 3.8 c 3.0 c 20 1.5 a 0.65 c 1.8 a 1.1 a 0.78 c 0.5 c -55 to 150 260 260 W A UNIT V THERMAL RESISTANCE RATINGS
    PARAMETER Maximum Junction-to-Ambient a, b Maximum Junction-to-Ambient c, d t = 10 s t = 10 s SYMBOL RthJA TYPICAL 55 125 MAXIMUM 70 160 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s, TA = 25 °C. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. d. Maximum under steady state conditions is 190 °C/W. e. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. f. In this document, any reference to case represents the body of the MICRO FOOT device and foot is the bump. S14-1067-Rev. A, 19-May-14 Document Number: 62961 1 For technical questions, contact: pmostechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 1 m m 4 S Bump Side View G S N-Channel MOSFET °C Si8410DB
    www.vishay.com Vishay Siliconix
    SYMBOL VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) TEST CONDITIONS VGS = 0 V, ID = 250 A ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = ± 8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70 °C VDS -5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.5 A VGS = 2.5 V, ID = 1 A VGS = 1.8 V, ID = 1 A VGS = 1.5 V, ID = 0.5 A VDS = 10 V, ID = 1.5 A MIN. 20 0.4 10 VDS ...

Цены

    SI8410DB-T2-E1 на РадиоЛоцман.Цены — от 21,70 до 40,26 руб.
    МОП-транзистор 20V N-Chnl TrenchFET 1.5-4.5V Microfoot
    Цена SI8410DB-T2-E1
    ПоставщикПроизводительЦена
    ЭлитанVishay21,70 руб.
    ПМ Электрониксот 40,26 руб.
    ЭлрусVishayпо запросу
    Подробнее об условиях поставки »

Классификация производителя

  • MOSFETs

Варианты написания: SI8410DBT2E1, SI8410DB T2 E1

Выписка из документа:
Si8410DB
www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () MAX. 0.037 at VGS = 4.5 V 20 0.041 at VGS = 2.5 V 0.047 at VGS = 1.8 V 0.068 at VGS = 1.5 V ID (A) a 5.7 5.4 5.0 4.2 5.9 nC Qg (TYP.) FEATURES TrenchFET® power MOSFET Ultra small 1 mm x 1 mm maximum outline Ultra-thin 0.54 mm maximum height Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 MICRO FOOT® 1 x 1 0 841xx x
m 1m Backside View
1 D 3 D 2 APPLICATIONS Load switch Power management High speed switching
1 G D Marking Code: 8410 Ordering Information: Si8410DB-T2-E1 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage TA = 25 °C Continuous Drain Current (TJ = 150 °C) TA = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 s) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Package Reflow Conditions e VPR IR/Convection TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT 20 ±8 5.7 a 4.5 a 3.8 c 3.0 c 20 1.5 a 0.65 c 1.8 a 1.1 a 0.78 c 0.5 c -55 to 150 260 260 W A UNIT V THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient a, b Maximum Junction-to-Ambient c, d t = 10 s t = 10 s SYMBOL RthJA TYPICAL 55 125 MAXIMUM 70 160 UNIT °C/W Notes a. Surface mounted on 1" x 1" FR4 board with full copper, t = 10 s, TA = 25 °C. b. Maximum under steady state conditions is 100 °C/W. c. Surface mounted on 1" x 1" FR4 board with minimum copper, t = 10 s. d. Maximum under steady state conditions is 190 °C/W. e. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. f. In this document, any reference to case represents the...

  • Серия: Si8410DB (1)
    • SI8410DB-T2-E1

На английском языке: Datasheet Vishay SI8410DB-T2-E1

Срезы ↓
Датчики влажности и температуры ДВТ-03
Цена: от 3 168 руб.
Доставка: Россия и страны СНГ
DIY настольный 3D принтер
Цена: 163 $ (9500 руб.)
Промо-акция, последняя скидка
Очки с подсветкой и сменными окулярами
Цена: от 8 $ (477 руб.)
Бесплатная доставка: Весь мир
радиолоцман вконтакте радиолоцман одноклассники радиолоцман facebook радиолоцман twitter радиолоцман google плюс