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Производитель:Power Integrations
Серия:LQA20T150C, LQA20N150C
Модель:LQA20T150C

Qspeed Family 150 V, 20 A Common-Cathode Diode

Datasheets

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    LQA20T150C, LQA20N150C QspeedTM Family
    150 V, 20 A Common-Cathode Diode Product Summary
    IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 150 27.8 1.66 0.59 A V nC A General Description
    This device has the lowest QRR of any 150 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Motor drive circuits DC-AC inverters Pin Assignment Features Low QRR, Low IRRM, Low tRR High dIF/dt capable Soft recovery TO-220AB
    LQA20T150C TO-252 DPAK
    A1 A2
    LQA20N150C Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size and count Enables extremely fast switching K RoHS Compliant
    Package uses Lead-free plating and "Green" mold compound Halogen free per IEC 61249-2-21. Absolute Maximum Ratings
    Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol
    VRRM IF(AVG) IFSM IFSM TJ TSTG PD Parameter
    Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Operating junction temperature range Storage temperature Lead soldering temperature Power dissipation Conditions
    TJ = 25 °C Per Diode, TJ = 150 °C, TC = 124 °C Per Device, TJ = 150 °C, TC = 124 °C Per Diode, 60 Hz, Ѕ cycle Per Diode, Ѕ cycle of t = 28 s Sinusoid, TC = 25 °C Rating
    150 10 20 100 350 ­55 to 150 ­55 to 150 300 41.7 Units
    V A A A A °C °C °C W Leads at 1.6mm from case, 10 sec TC = 25 °C Thermal Resistance
    Symbol
    RJA RJC Resistance from:
    Junction to ambient Junction to case Conditions
    TO-220AB (only) Per Diode Per Device Rating
    62 3.0 1.5 Units
    °C/W °C/W °C/W www.power.com Dec. 2014 LQA20T150C, LQA20N150C Electrical Specifications at TJ = 25 C (unless otherwise specified)
    Symbol
    IR VF CJ Parameter
    Reverse current per diode Forward voltage per diode Junction capacitance per diode Reverse recovery time, per diode Reverse recovery charge, per diode Maximum reverse recovery current, per diode Conditions ...

Цены

    Выпрямители 150V, Dual, 10A Ultra-Low Qrr Rect
    Цена LQA20T150C
    ПоставщикПроизводительЦена
    ЭлитанPower Integrations108 руб.
    5 элементPower Integrationsпо запросу
    Подробнее об условиях поставки »

Классификация производителя

Qspeed Q-Series Diodes

Выписка из документа:
LQA20T150C, LQA20N150C QspeedTM Family
150 V, 20 A Common-Cathode Diode Product Summary
IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 10 150 27.8 1.66 0.59 A V nC A General Description
This device has the lowest QRR of any 150 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Motor drive circuits DC-AC inverters Pin Assignment Features Low QRR, Low IRRM, Low tRR High dIF/dt capable Soft recovery TO-220AB
LQA20T150C TO-252 DPAK
A1 A2
LQA20N150C Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size and count Enables extremely fast switching K RoHS Compliant
Package uses Lead-free plating and "Green" mold compound Halogen free per IEC 61249-2-21. Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol
VRRM IF(AVG) IFSM IFSM TJ TSTG PD Parameter
Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Operating junction temperature range Storage temperature Lead soldering temperature Power dissipation Conditions
TJ = 25 °C Per Diode, TJ = 150 °C, TC = 124 °C Per Device, TJ = 150 °C, TC = 124 °C Per Diode, 60 Hz, Ѕ cycle Per Diode, Ѕ cycle of t = 28 s Sinusoid, TC = 25 °C Rating
150 10 20 100 350 ­55 to 150 ­55 to 150 300 41.7 Units
V A A A A °C °C °C W Leads at 1.6mm from case, 10 sec TC = 25 °C Thermal Resistance
Symbol
RJA RJC Resistance from:
Junction to ambient Junction to case Conditions
TO-220AB (only) Per Diode Per Device Rating
62 3.0 1.5 Units
°C/W °C/W °C/W www.power.com De...

  • Серия: LQA20T150C, LQA20N150C (2)

На английском языке: Datasheet Power Integrations LQA20T150C

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