Радиолоцман Электроника en
расширенный поиск +
  

Rohm RB851YT2R

Производитель:Rohm
Серия:RB851Y
Модель:RB851YT2R

Schottky barrier diode

Datasheets

  • Скачать » Datasheet, PDF, 111 Кб
    Выписка из документа ↓
    RB851Y
    Diodes Schottky barrier diode
    RB851Y
    Applications High frequency detection Dimensions (Unit : mm) Land size figure (Unit : mm)
    0.5
    0.22±0.05 0.13±0.05 (3) Features 1) Ultra small mold type. (EMD4) 2) Low Ct and high detection efficiency. 0.45 1.6±0.1 1.6±0.05 (4) 1.2±0.1 1.6±0.1 1.6±0.05 1.0
    00.1 EMD4 (1) (2) 0.5 0.5±0.05 Construction Silicon epitaxial planar 0.5 1.0±0.1 Structure ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm)
    4.0±0.1 2.0±0.05 1.5±0.1 0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.55
    0.8±0.1 00.1 0.65±0.1 1.65±0.1 1.7±0.05 1PIN 4.0±0.1 Absolute maximum ratings (Ta=25°C)
    Parameter Reverse voltage (DC) Forward current(DC)(*1) Junction temperature Storage temperature (*1)Rating of per diode Symbol VR IF Tj Tstg Limits 3 30 125 -40 to +125 Unit V mA Electrical characteristics (Ta=25°C)
    Param eter Forward voltage Revers e current Capacitance between term inal Sym bol VF IR Ct Min. Typ. 0.8 Max. 0.46 0.7 Unit V µA pF IF =1m A VR =1V VR =0V , f=1MHz Conditions Rev.B 1.65±0.01 1/2 RB851Y
    Diodes
    Electrical characteristic curves (Ta=25°C)
    10 FORWARD CURRENT:IF(mA) 1 Ta=125 10000 Ta=125 1000 Ta=75 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 f=1MHz REVERSE CURRENT:IR(uA) 0.1 0.01 Ta=-25 Ta=25 Ta=75 Ta=25 Ta=-25 0.001 0.0001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700 10 1 0 1 2 3 4 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 5 0.1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 5 410 FORWARD VOLTAGE:VF(mV) 400 390 380 370 AVE:389.3mV 360 VF DISPERSION MAP REVERSE CURRENT:IR(uA) Ta=25 IF=1mA n=30pcs 40 Ta=25 VR=1V n=30pcs 0.8 Ta=25 f=1MHz VR=0V n=10pcs 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.75 20 0.7 AVE:0.764pF 10 AVE:15.0uA 0 IR DISPERSION MAP 0.65 Ct DISPERSION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Rth(j-a) 1.4 1.2 1 0.8 0.6 0.4 0.2 0
    1000 C=200pF R=0 C=100pF R=1.5k AVE:0.53kV AVE:1.13kV Rth(j-c) 100 Mounted on epoxy board
    IM=1mA IF=10mA 1ms time 10 0.001 300us 0.01 1 100 TIME:t(s) 10 Rth-t CHARACTERISTICS 0.1 ESD DISPERSION MAP Rev.B 2/2 Appendix Notes
    No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are sh ...

Цены

    DIODE SCHOTTKY 3V 30MA EMD4
    ПоставщикПроизводительЦена
    ЭлитанRohm11,20 руб.
    Кремнийпо запросу
    ТаймЧипспо запросу
    Подробнее об условиях поставки »

Классификация производителя

Diodes > Detection Schottky Diodes

Выписка из документа:
RB851Y
Diodes Schottky barrier diode
RB851Y
Applications High frequency detection Dimensions (Unit : mm) Land size figure (Unit : mm)
0.5
0.22±0.05 0.13±0.05 (3) Features 1) Ultra small mold type. (EMD4) 2) Low Ct and high detection efficiency. 0.45 1.6±0.1 1.6±0.05 (4) 1.2±0.1 1.6±0.1 1.6±0.05 1.0
00.1 EMD4 (1) (2) 0.5 0.5±0.05 Construction Silicon epitaxial planar 0.5 1.0±0.1 Structure ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 1.5±0.1 0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.55
0.8±0.1 00.1 0.65±0.1 1.65±0.1 1.7±0.05 1PIN 4.0±0.1 Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (DC) Forward current(DC)(*1) Junction temperature Storage temperature (*1)Rating of per diode Symbol VR IF Tj Tstg Limits 3 30 125 -40 to +125 Unit V mA Electrical characteristics (Ta=25°C)
Param eter Forward voltage Revers e current Capacitance between term inal Sym bol VF IR Ct Min. Typ. 0.8 Max. 0.46 0.7 Unit V µA pF IF =1m A VR =1V VR =0V , f=1MHz Conditions Rev.B 1.65±0.01 1/2 RB851Y
Diodes
Electrical characteristic curves (Ta=25°C)
10 FORWARD CURRENT:IF(mA) 1 Ta=125 10000 Ta=125 1000 Ta=75 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 f=1MHz REVERSE CURRENT:IR(uA) 0.1 0.01 Ta=-25 Ta=25 Ta=75 Ta=25 Ta=-25 0.001 0.0001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700 10 1 0 1 2 3 4 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS...

  • Серия: RB851Y (1)
    • RB851YT2R

На английском языке: Datasheet Rohm RB851YT2R

Рекомендуемые материалы по теме:

При перепечатке материалов с сайта прямая ссылка на РадиоЛоцман обязательна.

Срезы ↓
Датчики влажности и температуры ДВТ-03
Цена: от 3 168 руб.
Доставка: Россия и страны СНГ
DIY настольный 3D принтер
Цена: 163 $ (9500 руб.)
Промо-акция, последняя скидка
Очки с подсветкой и сменными окулярами
Цена: от 8 $ (477 руб.)
Бесплатная доставка: Весь мир
радиолоцман вконтакте радиолоцман одноклассники радиолоцман facebook радиолоцман twitter радиолоцман google плюс