Datasheet ON Semiconductor NTD4815NHT4G — Даташит

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NTD4815NH
Power MOSFET
30 V, 35 A, Single N-Channel, DPAK/IPAK
Features Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
Low RG
These are Pb-Free Devices http://onsemi.com
V(BR)DSS RDS(ON) MAX
15 mΩ @ 10 V 30 V Applications D MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) G Symbol Value Unit Drain-to-Source Voltage VDSS 30 V Gate-to-Source Voltage VGS ±20 V ID 8.5 A S
N-CHANNEL MOSFET Continuous Drain
Current RθJA
(Note 1) TA = 25°C Power Dissipation
RθJA (Note 1) TA = 25°C PD 1.92 W Continuous Drain
Current RθJA
(Note 2) TA = 25°C ID 6.9 A 3 DPAK
CASE 369AA
(Bent Lead)
STYLE 2 TA = 85°C 4
1 2 TA = 85°C 5.3 TA = 25°C PD 1.26 W Continuous Drain
Current RθJC
(Note 1) TC = 25°C ID 35 A Power Dissipation
RθJC (Note 1) TC = 25°C PD 32.6 W TA = 25°C IDM 87 A TA = 25°C IDmaxPkg 35 A TJ, …