Type BSC067N06LS3 G OptiMOSTM3 Power-Transistor Product Summary Features
• Ideal for high frequency switching and sync. rec. VDS 60 V • Optimized technology for DC/DC converters RDS(on),max 6.7 mW • Excellent gate charge x R DS(on) product (FOM) ID 50 A • Very low on-resistance RDS(on)
• Superior thermal resistance
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC1) for target applications
• Halogen-free according to IEC61249-2-21
Type BSC067N06LS3 G Package PG-TDSON-8 Marking 067N06LS Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Continuous drain current ID Value V GS=10 V, T C=25 °C 50 V GS=10 V, T C=100 °C 50 V GS=4.5 V, T C=25 °C 50 V GS=4.5 V,
T C=100 °C 37 V GS=10 V, T A=25 °C,
R thJA=50 K/W 2) 15 Unit
A Pulsed drain current3) I D,pulse T C=25 °C 200 Avalanche energy, single pulse4) E AS I D=50 A, R GS=25 W 47 mJ Gate source voltage V GS ±20 V 1) J-STD20 and JESD22
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3 for more detailed information
2) 4) See figure 13 for more detailed information Rev. 2.4 page 1 2013-09-18 BSC067N06LS3 G
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Symbol Conditions Power dissipation P tot Value T C=25 °C 69 T A=25 °C, T j, T stg -55 . 150 IEC climatic category; DIN IEC 68-1 Parameter W 2.5 R thJA=50 K/W 2)
Operating and storage temperature Unit °C 55/150/56 Values Symbol Conditions Unit min. typ. max. -1.8 minimal footprint -62 6 cm2 cooling area2) -50 Thermal characteristics
Thermal resistance, junction -case R thJC Device on PCB R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
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