Datasheet Texas Instruments UC2708DWTR — Даташит
| Производитель | Texas Instruments |
| Серия | UC2708 |
| Модель | UC2708DWTR |
Неинвертирующие высокоскоростные драйверы питания 16-SOIC от -40 до 85
Datasheets
Dual Non-Inverting Power Driver datasheet
PDF, 1.0 Мб, Версия: C, Файл опубликован: 25 сен 2007
Выписка из документа
Цены
 Купить UC2708DWTR на РадиоЛоцман.Цены — от 343 до 106 148 757 ₽13 предложений от 10 поставщиков MOSFET DRVR 3A 2Out High Speed Non-Inv 16Pin SOIC T/R | |||
| UC2708DWTR Texas Instruments | 343 ₽ | ||
| UC2708DWTR Texas Instruments | от 414 ₽ | ||
| UC2708DWTR Texas Instruments | 603 ₽ | ||
| UC2708DWTR Texas Instruments | по запросу | ||
Статус
| Статус продукта | В производстве (Рекомендуется для новых разработок) |
| Доступность образцов у производителя | Нет |
Корпус / Упаковка / Маркировка
| Pin | 16 |
| Package Type | DW |
| Industry STD Term | SOIC |
| JEDEC Code | R-PDSO-G |
| Package QTY | 2000 |
| Carrier | LARGE T&R |
| Маркировка | UC2708DW |
| Width (мм) | 7.5 |
| Length (мм) | 10.3 |
| Thickness (мм) | 2.35 |
| Pitch (мм) | 1.27 |
| Max Height (мм) | 2.65 |
| Mechanical Data | Скачать |
Экологический статус
| RoHS | Совместим |
Application Notes
- DN-35 IGBT Drive Using MOSFET Gate DriversPDF, 54 Кб, Файл опубликован: 5 сен 1999
The UC1708 family of power drivers is made with a high-speed high-voltage Schottky process to interface control functions and high-power switching devices-particularly power MOSFETs. The UC1724 family of Isolated Drive Transmitters along with the UC1725 Isolated Drivers provides a unique solution to driving isolated power MOSFET gates. They are particularly suited to drive the high-side devices - U-118 New Driver ICs Optimize High-Speed Power MOSFET Switching CharacteristicsPDF, 573 Кб, Файл опубликован: 5 сен 1999
The UC3705 family of power drivers is made with a high speed Schottky process to interface between low-level control functions and high-power switching devices particularly power MOSFETs. These devices are also an optimum choice for capacitive line drivers where up to 1.5 amps may be switched in either direction. With both inverting and non-inverting inputs available logic signals of either pola - U-137 Practical Considerations in High Performance MOSFET IGBT and MCT GatePDF, 244 Кб, Файл опубликован: 5 сен 1999
The switch-mode power supply industry's trend towards higher conversion frequencies is justified by the dramatic improvement in obtaining higher power densities. And as these frequencies are pushed towards and beyond one MHz the MOSFET transition periods can become a significant portion of the total switching period. Losses associated with the overlap of switch voltage and current not only degrad
Модельный ряд
Классификация производителя
- Semiconductors > Power Management > MOSFET and IGBT Gate Drivers > Low-side Driver
