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Datasheet Texas Instruments 74ACT11244 — Даташит

ПроизводительTexas Instruments
Серия74ACT11244
Datasheet Texas Instruments 74ACT11244

Восьмеричные буферы/драйверы с выходами с 3 состояниями

Datasheets

Octal Buffer/Line Driver With 3-State Outputs datasheet
PDF, 565 Кб, Версия: C, Файл опубликован: 1 апр 1996
Выписка из документа

Цены

27 предложений от 20 поставщиков
Буферы и линейные аппаратные драйверы Octal Buffers/ Line Drivers
EIS Components
Весь мир
74ACT11244NSR
Texas Instruments
73 ₽
74ACT11244PW
Texas Instruments
91 ₽
ЭИК
Россия
74ACT11244PWR
Texas Instruments
от 367 ₽
74ACT11244DBR
Texas Instruments
по запросу
Выбираем схему BMS для заряда литий-железофосфатных (LiFePO4) аккумуляторов

Статус

74ACT11244DBLE74ACT11244DBR74ACT11244DW74ACT11244DWG474ACT11244DWR74ACT11244PW74ACT11244PWG474ACT11244PWLE74ACT11244PWR74ACT11244PWRE474ACT11244PWRG4
Статус продуктаСнят с производстваВ производствеВ производствеВ производствеВ производствеВ производствеВ производствеСнят с производстваВ производствеВ производствеВ производстве
Доступность образцов у производителяНетНетНетНетНетНетНетНетНетНетНет

Корпус / Упаковка / Маркировка

74ACT11244DBLE74ACT11244DBR74ACT11244DW74ACT11244DWG474ACT11244DWR74ACT11244PW74ACT11244PWG474ACT11244PWLE74ACT11244PWR74ACT11244PWRE474ACT11244PWRG4
N1234567891011
Pin2424242424242424242424
Package TypeDBDBDWDWDWPWPWPWPWPWPW
Industry STD TermSSOPSSOPSOICSOICSOICTSSOPTSSOPTSSOPTSSOPTSSOPTSSOP
JEDEC CodeR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-GR-PDSO-G
Width (мм)5.35.37.57.57.54.44.44.44.44.44.4
Length (мм)8.28.215.415.415.47.87.87.87.87.87.8
Thickness (мм)1.951.952.352.352.35111111
Pitch (мм).65.651.271.271.27.65.65.65.65.65.65
Max Height (мм)222.652.652.651.21.21.21.21.21.2
Mechanical DataСкачатьСкачатьСкачатьСкачатьСкачатьСкачатьСкачатьСкачатьСкачатьСкачатьСкачать
Package QTY2000252520006060200020002000
CarrierLARGE T&RTUBETUBELARGE T&RTUBETUBELARGE T&RLARGE T&RLARGE T&R
МаркировкаAT244ACT11244ACT11244ACT11244AT244AT244AT244AT244AT244

Параметры

Parameters / Models74ACT11244DBLE
74ACT11244DBLE
74ACT11244DBR
74ACT11244DBR
74ACT11244DW
74ACT11244DW
74ACT11244DWG4
74ACT11244DWG4
74ACT11244DWR
74ACT11244DWR
74ACT11244PW
74ACT11244PW
74ACT11244PWG4
74ACT11244PWG4
74ACT11244PWLE
74ACT11244PWLE
74ACT11244PWR
74ACT11244PWR
74ACT11244PWRE4
74ACT11244PWRE4
74ACT11244PWRG4
74ACT11244PWRG4
Approx. Price (US$)1.24 | 1ku1.24 | 1ku
Bits888888888
Bits(#)88
F @ Nom Voltage(Max), Mhz909090909090909090
F @ Nom Voltage(Max)(Mhz)9090
ICC @ Nom Voltage(Max), мА0.080.080.080.080.080.080.080.080.08
ICC @ Nom Voltage(Max)(mA)0.080.08
Тип входаTTLTTL
Рабочий диапазон температур, Cот -40 до 85от -40 до 85от -40 до 85от -40 до 85от -40 до 85от -40 до 85от -40 до 85от -40 до 85от -40 до 85
Operating Temperature Range(C)-40 to 85-40 to 85
Output Drive (IOL/IOH)(Max), мА-24/24-24/24-24/24-24/24-24/24-24/24-24/24-24/24-24/24
Output Drive (IOL/IOH)(Max)(mA)-24/24-24/24
Тип выходаCMOSCMOS
Package GroupSSOPSSOPSOICSOICSOICTSSOPTSSOPTSSOPTSSOPTSSOPTSSOP
Package Size: mm2:W x L, PKG24SSOP: 64 mm2: 7.8 x 8.2(SSOP)24SOIC: 160 mm2: 10.3 x 15.5(SOIC)24SOIC: 160 mm2: 10.3 x 15.5(SOIC)24SOIC: 160 mm2: 10.3 x 15.5(SOIC)24TSSOP: 50 mm2: 6.4 x 7.8(TSSOP)24TSSOP: 50 mm2: 6.4 x 7.8(TSSOP)24TSSOP: 50 mm2: 6.4 x 7.8(TSSOP)24TSSOP: 50 mm2: 6.4 x 7.8(TSSOP)24TSSOP: 50 mm2: 6.4 x 7.8(TSSOP)
Package Size: mm2:W x L (PKG)See datasheet (PDIP)See datasheet (PDIP)
RatingCatalogCatalogCatalogCatalogCatalogCatalogCatalogCatalogCatalogCatalogCatalog
Schmitt TriggerNoNoNoNoNoNoNoNoNoNoNo
Technology FamilyACTACTACTACTACTACTACTACTACTACTACT
VCC(Max), В5.55.55.55.55.55.55.55.55.5
VCC(Max)(V)5.55.5
VCC(Min), В4.54.54.54.54.54.54.54.54.5
VCC(Min)(V)4.54.5
Voltage(Nom), В555555555
Voltage(Nom)(V)55
tpd @ Nom Voltage(Max), нс9.99.99.99.99.99.99.99.99.9
tpd @ Nom Voltage(Max)(ns)9.99.9

Экологический статус

74ACT11244DBLE74ACT11244DBR74ACT11244DW74ACT11244DWG474ACT11244DWR74ACT11244PW74ACT11244PWG474ACT11244PWLE74ACT11244PWR74ACT11244PWRE474ACT11244PWRG4
RoHSНе совместимСовместимСовместимСовместимСовместимСовместимСовместимНе совместимСовместимСовместимСовместим
Бессвинцовая технология (Pb Free)НетНет

Application Notes

  • Selecting the Right Level Translation Solution (Rev. A)
    PDF, 313 Кб, Версия: A, Файл опубликован: 22 июн 2004
    Supply voltages continue to migrate to lower nodes to support today's low-power high-performance applications. While some devices are capable of running at lower supply nodes others might not have this capability. To haveswitching compatibility between these devices the output of each driver must be compliant with the input of the receiver that it is driving. There are several level-translati
  • Introduction to Logic
    PDF, 93 Кб, Файл опубликован: 30 апр 2015
  • Implications of Slow or Floating CMOS Inputs (Rev. D)
    PDF, 260 Кб, Версия: D, Файл опубликован: 23 июн 2016
  • Understanding and Interpreting Standard-Logic Data Sheets (Rev. C)
    PDF, 614 Кб, Версия: C, Файл опубликован: 2 дек 2015
  • Semiconductor Packing Material Electrostatic Discharge (ESD) Protection
    PDF, 337 Кб, Файл опубликован: 8 июл 2004
    Forty-eight-pin TSSOP components that were packaged using Texas Instruments (TI) standard packing methodology were subjected to electrical discharges between 0.5 and 20 kV as generated by an IEC ESD simulator to determine the level of ISD protection provided by the packing materials. The testing included trays tape and reel and magazines. Additional units were subjected to the same discharge
  • TI IBIS File Creation Validation and Distribution Processes
    PDF, 380 Кб, Файл опубликован: 29 авг 2002
    The Input/Output Buffer Information Specification (IBIS) also known as ANSI/EIA-656 has become widely accepted among electronic design automation (EDA) vendors semiconductor vendors and system designers as the format for digital electrical interface data. Because IBIS models do not reveal proprietary internal processes or architectural information semiconductor vendors? support for IBIS con
  • CMOS Power Consumption and CPD Calculation (Rev. B)
    PDF, 89 Кб, Версия: B, Файл опубликован: 1 июн 1997
    Reduction of power consumption makes a device more reliable. The need for devices that consume a minimum amount of power was a major driving force behind the development of CMOS technologies. As a result CMOS devices are best known for low power consumption. However for minimizing the power requirements of a board or a system simply knowing that CMOS devices may use less power than equivale
  • Designing With Logic (Rev. C)
    PDF, 186 Кб, Версия: C, Файл опубликован: 1 июн 1997
    Data sheets which usually give information on device behavior only under recommended operating conditions may only partially answer engineering questions that arise during the development of systems using logic devices. However information is frequently needed regarding the behavior of the device outside the conditions in the data sheet. Such questions might be:?How does a bus driver behave w
  • Using High Speed CMOS and Advanced CMOS in Systems With Multiple Vcc
    PDF, 43 Кб, Файл опубликован: 1 апр 1996
    Though low power consumption is a feature of CMOS devices sometimes this feature does not meet a designer?s system power supply constraints. Therefore a partial system power down or multiple Vcc supplies are used to meet the needs of the system. This document shows electrostatic discharge protection circuits. It also provides circuit and bus driver examples of partial system power down and curren

Модельный ряд

Классификация производителя

  • Semiconductors> Logic> Buffer/Driver/Transceiver> Non-Inverting Buffer/Driver

На английском языке: Datasheet Texas Instruments 74ACT11244

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