Datasheet Texas Instruments LP8556 — Даташит

Производитель	Texas Instruments
Серия	LP8556

Datasheets

Цены

Купить LP8556 на РадиоЛоцман.Цены — от 131 до 44 499 ₽ 10 предложений от 10 поставщиков Средства разработки интегральных схем (ИС) управления питанием LP8556 Eval Mod
Элитан Россия	LP8556TME-E04 Texas Instruments	131 ₽	Купить
ЧипСити Россия	LP8556SQ-EVM/NOPB Texas Instruments	15 947 ₽	Купить
ЭИК Россия	LP8556SQ-EVM/NOPB Texas Instruments	44 499 ₽	Купить
МосЧип Россия	LP8556TM-EVM Texas Instruments	по запросу	Купить

Статус

Корпус / Упаковка / Маркировка

Параметры

Parameters / Models	LP8556SQ-E00/NOPB	LP8556SQ-E08/NOPB	LP8556SQ-E09/NOPB	LP8556SQE-E00/NOPB	LP8556SQE-E08/NOPB	LP8556SQE-E09/NOPB	LP8556SQX-E00/NOPB	LP8556SQX-E08/NOPB	LP8556SQX-E09/NOPB	LP8556TME-E02/NOPB	LP8556TME-E03/NOPB	LP8556TME-E04/NOPB	LP8556TME-E05/NOPB	LP8556TME-E06/NOPB	LP8556TME-E09/NOPB	LP8556TME-E11/NOPB	LP8556TMX-E02/NOPB	LP8556TMX-E03/NOPB	LP8556TMX-E04/NOPB	LP8556TMX-E05/NOPB	LP8556TMX-E06/NOPB	LP8556TMX-E09/NOPB	LP8556TMX-E11/NOPB
Количество каналов	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6	6
Duty Cycle(Max), %	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100	100
LED	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60	60
LED Current Per Channel, мА	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50	50
Рабочий диапазон температур, C	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85	от -30 до 85
Package Group	WQFN	WQFN	WQFN	WQFN	WQFN	WQFN	WQFN	WQFN	WQFN	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA	DSBGA
Package Size: mm2:W x L, PKG	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	24WQFN: 16 mm2: 4 x 4(WQFN)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)	See datasheet (DSBGA)
Peak Efficiency, %	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95	95
Rating	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog	Catalog
Shutdown Current(Typ), uA	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1	0.1
Special Features	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control	I2C Control
Switching Frequency(Max), kHz	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250	1250
Topology	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost	Boost
Тип	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive	Inductive
Vin(Max), В	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20	20
Vin(Min), В	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7	2.7
Vout(Max), В	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48	48
Vout(Min), В	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7	7

Экологический статус

Application Notes

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  AN-1112 DSBGA Wafer Level Chip Scale Package (Rev. AG)
  PDF, 13.7 Мб, Версия: AG, Файл опубликован: 12 авг 2015
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  Increasing Full-Load Efficiency of a Backlight Driver
  PDF, 1.2 Мб, Файл опубликован: 5 июн 2013
  This application report discusses a way to increase the efficiency of the boost converter in a backlightdriver by reducing conduction and AC losses in the inductor, thereby increasing the overall efficiency ofthe backlight driver at higher loads.
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  Inductor Selection in Boost Converters for LCD Backlight Applications
  PDF, 764 Кб, Файл опубликован: 24 окт 2016
  White LED drivers for LCD back-light applications are often designed for battery-powered devices. This makes circuit size and efficiency crucial. Because of this, selecting the optimal inductor is one of the mostimportant aspects of the design. This application note discusses the important parameters of the inductorand how to select the right inductor for the application.
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  Schottky Diode Selection in Asynchronous Boost Converters
  PDF, 491 Кб, Файл опубликован: 6 сен 2016
  Asynchronous boost converters require a Schottky diode as the rectifying element due to the diode's lowforward voltage and fast turn-on time. Because of these characteristics asynchronous boost converterscan have as good as, or better efficiency, than synchronous boost converters. This is especially true whenthe boost conversion ratios (VOUT/VIN) are high, and the Schottky diode conduction t
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  Power Budget for Backlight Drivers
  PDF, 592 Кб, Файл опубликован: 27 июн 2013
  This application report discusses the Power Budget of an LED backlight driver. It provides experimental and theoretical methods of calculating different losses associated with LED backlight drivers. It also provides an analytical discussion on behavior of different losses vs brightness levels.

Модельный ряд

Классификация производителя

• Semiconductors> Power Management> LED Driver> Backlight