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NXP

Производитель:NXP
Серия:BF862

N-channel junction FET

Datasheets

  • Скачать » Datasheet, PDF, 239 Кб
    Выписка из документа ↓
    DISCRETE SEMICONDUCTORS DATA SHEET
    book, halfpage M3D088 BF862 N-channel junction FET
    Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET
    FEATURES High transition frequency for excellent sensitivity in AM car radios High transfer admittance. APPLICATIONS Pre-amplifiers in AM car radios.
    handbook, halfpage 2 BF862
    PINNING SOT23 PIN 1 2 3 source drain gate DESCRIPTION 1 DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable.
    3
    Top view
    Marking code: 2Ap.
    MAM036 g d s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS Ptot yfs Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. Ts 90 C CONDITIONS MIN. 0.3 10 35 TYP. 0.8 45 MAX. 20 1.2 25 300 150 UNIT V V mA mW mS C 2000 Jan 05 2 NXP Semiconductors Product specification N-channel junction FET
    LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDG VGS IDS IG Ptot Tstg Tj Note 1. Main heat transfer is via the gate lead. THERMAL CHARACTERISTICS SYMBOL Rth j-s Note 1. Soldering point of the gate lead. PARAMETER thermal resistance from junction to soldering point CONDITIONS note 1 VALUE 200 PARAMETER drain-source voltage drain-gate voltage gate-source voltage drain-source current forward gate current total power dissipation storage temperature junction temperature Ts 90 C; note 1 CONDITIONS MIN. 65 BF862 MAX. 20 20 20 40 10 300 +150 150 UNIT V V V mA mA mW C C UNIT K/W handbook, halfpage 400 MCD808 Ptot (mW) 300 200 100 0 0 40 80 120 Ts (°C) 160 Fig.2 Power derating curve. 2000 Jan 05 3 NXP Semiconductors Product specification N-channel junction FET
    STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)GSS VGS VGSoff IGSS IDSS PARAMETER gate-source breakdown voltage gate-source forward voltage gate-source cut-off voltage reverse gate current drain-source current CONDITIONS IGS = 1 A; VDS = 0 VDS = 0; IG = 1 mA VDS = 8 V; ID = 1 A VGS = 15 V; VDS = 0 VGS = 0; VDS = 8 V 0.3 10 MIN. 20 0.8 TYP. BF862 MAX. 1 1.2 1 25 UNIT V V V nA mA DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VGS = 0; VDS = 8 V; unless otherwise specified. SYMBOL yfs gos Ciss Crss en fT PARAMETER common source forward transfer admittance common source output conductance ...

Цены

    BF862 на РадиоЛоцман.Цены — от 2,25 до 36,02 руб.
    Исполнение: SOT23. SOT23/JFET DUAL N-CHANNEL Транзистор биполярный стандартный BF862.215. Описание в формате PDF
    Цена BF862
    ПоставщикПроизводительНаименованиеЦена
    5 элементCE10/35-SMDот 2,25 руб.
    AliExpressЧип BF862 Штамп 2AW SOT-23 МОП трубы n-канальных транзисторов-KSYHKJ2,53 руб.
    ТерраэлектроникаNXPBF862.215от 13,60 руб.
    ИнтерияNXPBF862.21514,35 руб.
    ЭФОNXPBF862,215по запросу
    Все 23 предложений от 18 поставщиков »

Выписка из документа:
DISCRETE SEMICONDUCTORS DATA SHEET
book, halfpage M3D088 BF862 N-channel junction FET
Product specification Supersedes data of 1999 Jun 29 2000 Jan 05 NXP Semiconductors Product specification N-channel junction FET
FEATURES High transition frequency for excellent sensitivity in AM car radios High transfer admittance. APPLICATIONS Pre-amplifiers in AM car radios.
handbook, halfpage 2 BF862
PINNING SOT23 PIN 1 2 3 source drain gate DESCRIPTION 1 DESCRIPTION Silicon N-channel symmetrical junction field-effect transistor in a SOT23 package. Drain and source are interchangeable.
3
Top view
Marking code: 2Ap.
MAM036 g d s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VGSoff IDSS Ptot yfs Tj PARAMETER drain-source voltage gate-source cut-off voltage drain-source current total power dissipation transfer admittance junction temperature CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. Ts 90 C CONDITIONS MIN. 0.3 10 35 TYP. 0.8 45 MAX. 20 1.2 25 300 150 UNIT V V mA mW mS C 2000 Jan 05 2 NXP Semiconductors Product specification N-channel junction FET
LIMITING VALUES In accordance with the Absolute Maximum Rating ...

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