Datasheet Vishay SI2342DS-T1-GE3 — Даташит

New Product Si2342DS
Vishay Siliconix N-Channel 8 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
RDS(on) (пЃ—) ID (A)a, e 0.017 at VGS = 4.5 V 6 0.020 at VGS = 2.5 V 6 0.022 at VGS = 1.8 V 6 0.030 at VGS = 1.5 V 6 0.075 at VGS = 1.2 V 6 VDS (V) 8 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET Low On-Resistance 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC Qg (Typ.) 6 nC APPLICATIONS Load Switches for Low Voltage Gate Drive Low Voltage Operating Circuits
-Gate Drive 1.2 V to 5 V SOT-23 G 1 D
3
S (3) D
Marking Code 2 F2 XXX
Lot Traceability
and Date Code Top View G
(1) Part # Code (2)
S
N-Channel MOSFET Ordering Information: Si2342DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 В°C, unless otherwise noted)
Parameter Symbol Limit Drain-Source Voltage VDS 8 Gate-Source Voltage VGS В±5 TC = 70 В°C ID TA = 25 В°C 6e, b, c
5.8b, c
30 TA = 70 В°C
Pulsed Drain Current (t = 300 Вµs) IDM
TC = 25 В°C Continuous Source-Drain Diode Current 1.1b, c
2.5 TC = 25 В°C
TC = 70 В°C Maximum Power Dissipation 1.6 PD TA = 25 В°C W 1.3b, c
0.8b, c …