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Datasheet Vishay SI8466EDB-T2-E1

:Vishay
:Si8466EDB
:SI8466EDB-T2-E1

N-Channel 8 V (D-S) MOSFET

Datasheets

  • » Datasheet, PDF, 170
    Si8466EDB
    Si8466EDB
    www.vishay.com Vishay Siliconix N-Channel 8 V (D-S) MOSFET
    FEATURES PRODUCT SUMMARY
    VDS (V) 8 RDS(on) (Ω) MAX. ID (A) a, e 0.043 at VGS = 4.5 V 5.4 0.046 at VGS = 2.5 V 5.2 0.060 at VGS = 1.5 V 4.6 0.090 at VGS = 1.2 V 3.0 MICRO FOOT® 1 x
    xxx xx
    x Qg (TYP.) m
    m m
    1m
    Backside View
    1 Typical ESD protection 3000 V HBM Ultra-Small 1 mm x 1 mm maximum outline 6.8 nC Ultra-thin 0.548 mm maximum height Material categorization:
    for definitions of compliance please see
    www.vishay.com/doc?99912 1x1
    S
    3 TrenchFET® power MOSFET S
    2 APPLICATIONS D Low on-resistance load switch
    for portable devices 1
    G
    4
    D
    Bump Side View -Low power consumption,
    low voltage drop G -Increased battery life Marking Code: xxxx = 8466
    xxx = Date / lot traceability code -Space savings on PCB Ordering Information:
    Si8466DB-T2-E1 (lead (Pb)-free and halogen-free) N-Channel MOSFET ...

    - 8V 5.4A 1.8W 43mOhms @ 4.5V
    Vishay15,30 .
    - Vishay
    Vishay
    »
    »

MOSFETs

: SI8466EDBT2E1, SI8466EDB T2 E1

  • : Si8466EDB (1)
    • SI8466EDB-T2-E1

: Datasheet Vishay SI8466EDB-T2-E1

    -03
: 3 168 .
:
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