Datasheet ON Semiconductor FDS6675 — Даташит

FDS6675
Single P-Channel, Logic Level, PowerTrenchTM MOSFET
General Description Features This P-Channel Logic Level MOSFET is produced
using ON Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
These devices are well suited for notebook computer
applications: load switching and power management,
battery charging circuits, and DC/DC conversion. SuperSOTTM-6 SOT-23 D SuperSOTTM-8 D D
D S
F D 75
66 SO-8 pin 1 Absolute Maximum Ratings S S S G -11 A, -30 V. RDS(ON) = 0.014 Ω @ VGS = -10 V,
RDS(ON) = 0.020 Ω @ VGS = -4.5 V.
Low gate charge (30nC typical).
High performance trench technology for extremely low
RDS(ON).
High power and current handling capability. SO-8 SOIC-16 SOT-223 5 4 6 3 7 2 8 1 TA = 25oC unless otherwise noted Symbol Parameter FDS6675 Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage В±20 V ID Drain Current -Continuous -11 A (Note 1a) -Pulsed
PD Power Dissipation for Single Operation -50
(Note 1a) 2.5 (Note 1b) 1.2 (Note 1c) TJ,TSTG Operating and Storage Temperature Range W 1
-55 to 150 В°C THERMAL CHARACTERISTICS
RОёJA Thermal Resistance, Junction-to-Ambient (Note 1a) 50 В°C/W RОёJC Thermal Resistance, Junction-to-Case (Note 1) 25 В°C/W В© 1998 Semiconductor Components Industries, LLC.
October-2017, Rev. 3 Publication Order Number: …