Datasheet IRF8714GPBF - International Rectifier Даташит N CHANNEL полевой транзистор, 30 В, 14 мА — Даташит
Наименование модели: IRF8714GPBF
Купить IRF8714GPBF на РадиоЛоцман.Цены — от 23 до 175 ₽ 8 предложений от 8 поставщиков MOSFET N-CH 30V 14A 8-SOIC | |||
| IRF8714GPBF International Rectifier | 23 ₽ | ||
| IRF8714GPBF Infineon | 164 ₽ | ||
| IRF8714GPBF Infineon | 175 ₽ | ||
| IRF8714GPBF Infineon | по запросу | ||
Подробное описание
Производитель: International Rectifier
Описание: N CHANNEL полевой транзистор, 30 В, 14 мА
Скачать Data SheetКраткое содержание документа:
PD - 96263
IRF8714GPbF
Applications HEXFET® Power MOSFET l Control MOSFET of Sync-Buck VDSS RDS(on) max Qg Converters used for Notebook Processor Power 30V 8.7m @VGS = 10V 8.1nC l Control MOSFET for Isolated DC-DC Converters in Networking Systems Benefits A A l Very Low Gate Charge 1 8 D S l Very Low RDS(on) at 4.5V VGS 2 7 D S l Ultra-Low Gate Impedance 3 6 S D l Fully Characterized Avalanche Voltage 4 5 G D and Current l 20V VGS Max.
Gate Rating SO-8 Top View l 100% tested for Rg l Lead-Free l Halogen-Free Description The IRF8714GPbF incorporates the latest HEXFET Power MOSFET Silicon Technology into the industry standard SO-8 package. The IRF8714GPbF has been optimized for parameters that are critical in synchronous buck operation including Rds(on) and gate charge to reduce both conduction and switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors for Notebook and Netcom applications.
:
Спецификации:
- Полярность транзистора: N Channel
- Continuous Drain Current Id: 14 мА
- Drain Source Voltage Vds: 30 В
- On Resistance Rds(on): 87 МОм
- Rds(on) Test Voltage Vgs: 10 В
- Threshold Voltage Vgs Typ: 1.8 В
RoHS: есть
