Datasheet MMDF2P02ER2G - ON Semiconductor Даташит P CHANNEL полевой транзистор, -25 В, SOIC — Даташит
Наименование модели: MMDF2P02ER2G
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Подробное описание
Производитель: ON Semiconductor
Описание: P CHANNEL полевой транзистор, -25 В, SOIC
Скачать Data SheetКраткое содержание документа:
MMDF2P02E Power MOSFET 2 Amps, 25 Volts
P-Channel SO-8, Dual
These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance.
They are capable of withstanding high energy in the avalanche and commutation modes and the drain-to-source diode has a low reverse recovery time. MiniMOSt devices are designed for use in low voltage, high speed switching applications where power efficiency is important. Typical applications are dc-dc converters, and power management in portable and battery powered products such as computers, printers, cellular and cordless phones. They can also be used for low voltage motor controls in mass storage products such as disk drives and tape drives. The avalanche energy is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
Features http://onsemi.com
2 AMPERES, 25 VOLTS RDS(on) = 250 mW
Спецификации:
- Полярность транзистора: P Channel
- Continuous Drain Current, Id: 2.5 А
- Drain Source Voltage, Vds: 25 В
- On Resistance, Rds(on): 0.25 Ом
- Rds(on) Test Voltage, Vgs: 10 В
- Threshold Voltage, Vgs Typ: 2 В
RoHS: есть
