Datasheet 2N4401 (ON Semiconductor)

link to page 2 2N4401 General Purpose Transistors
NPN Silicon Features http://onsemi.com
• Pb−Free Packages are Available* COLLECTOR 3
MAXIMUM RATINGS
2
Rating Symbol Value Unit
BASE Collector − Emitter Voltage VCEO 40 Vdc Collector − Base Voltage VCBO 60 Vdc 1 EMITTER Emitter − Base Voltage VEBO 6.0 Vdc Collector Current − Continuous IC 600 mAdc Total Device Dissipation PD @ TA = 25°C 625 mW Derate above 25°C 5.0 mW/°C
TO−92
Total Device Dissipation P
CASE 29
D @ T
STYLE 1
C = 25°C 1.5 W Derate above 25°C 12 mW/°C 1 Operating and Storage Junction T 1 J, Tstg −55 to °C 2 2 Temperature Range +150 3 3 STRAIGHT LEAD BENT LEAD
THERMAL CHARACTERISTICS
BULK PACK TAPE & REEL AMMO PACK
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case R
MARKING DIAGRAM
qJC 83.3 °C/W Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 2N 4401 AYWW G G 2N4401 = Device Code A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2010
1
Publication Order Number:
February, 2010 − Rev. 4 2N4401/D