RH1185AMK TABLE 1A: ELECTRICAL CHARACTERISTICS(Postirradiation)10KRAD(Si)20KRAD(Si)50KRAD(Si)100KRAD(Si)200KRAD(Si)PARAMETER AND CONDITONSMINMAXMINMAXMINMAXMINMAXMINMAXUNITS Reference Voltage Tolerance VIN – VOUT = 5V, VOUT = VREF –1.2 1.2 –1.2 1.2 –1.5 1.5 –1.5 1.5 –2 2 % Reference Voltage Tolerance VIN – VOUT = 1.2V to VIN = 30V, –3 3 –3 3 –3.2 3.2 –3.5 3.5 –4 4 % 1mA ≤ IOUT ≤ 3A, PD ≤ 25W (Note 6), VOUT = 5V, TMIN ≤ TJ ≤ TMAX (Note 9) Feedback PIn Bias Current, VOUT = VREF 2 2 2.5 3 3 µA Dropout Voltage (Note 3) IOUT = 0.5A, VOUT = 5V 0.4 0.4 0.4 0.425 0.45 V IOUT = 3A, VOUT = 5V 1 1 1 1.05 1.1 V Load Regulation (Note 7) IOUT = 5mA to 3A VIN – VOUT = 1.5V to 10V, VOUT = 5V 0.3 0.4 0.5 0.8 1 % Line Regulation, Absolute Value (Note 7) VIN – VOUT = 1V to 20V, VOUT = 5V 0.01 0.01 0.01 0.02 0.05 %/V Minimum Input Voltage (Note 4) IOUT = 1A, VOUT = VREF 3.9 3.9 3.9 4 4 V IOUT = 3A, VOUT = VREF 4.4 4.4 4.4 4.5 4.5 V Internal Current Limit (Note 12) 1.5V ≤ VIN – VOUT ≤ 10V 3.3 4.3 3.3 4.3 3.3 4.4 3.3 4.55 3.3 4.75 A VIN – VOUT = 15V 2 4.3 2 4.3 2 4.35 2 4.5 2 4.7 A VIN – VOUT = 20V 1 2.7 1 2.75 1 2.85 1 3.1 1 3.3 A VIN – VOUT = 30V 0.2 1 0.2 1.15 0.2 1.3 0.2 1.6 0.2 2 A External Current Limit (Note 11) RLIM = 5k 2.7 3.3 2.7 3.4 2.7 3.5 2.7 3.7 2.7 3.9 A RLIM = 15k 0.9 1.1 0.9 1.25 0.9 1.4 0.9 1.6 0.9 1.9 A Quiescent Supply Current IOUT = 5mA, VOUT = VREF , 4V ≤ VIN ≤ 25V 3.5 3.5 3.5 3.5 3.5 mA Supply Current Change With Load VIN – VOUT = VSAT 25 27 30 35 45 mA/A VIN – VOUT ≥ 2V 15 16 18 21 27 mA/A Note 1: Stresses beyond those listed under Absolute Maximum Ratings Note 6: The 25W power level is guaranteed for an input-output voltage of may cause permanent damage to the device. Exposure to any Absolute 8.3V to 17V. At lower voltages the 3A limit applies, and at higher voltages Maximum Rating condition for extended periods may affect device the internal power limiting may restrict regulator power below 25W. See reliability and lifetime. graph of Internal Current Limit in LT1185 data sheet. Note 2: Reference voltage is guaranteed both at nominal conditions Note 7: Line and load regulation are measured on a pulse basis with a (no load, 25°C) and at worst-case conditions of load, line, power and pulse width of ≈2ms, to minimize heating. DC regulation will be affected temperature. by thermal regulation and temperature coefficient of the reference. See the Note 3: Dropout voltage is tested by reducing input voltage until the Applications Information section of LT1185 data sheet for details. output drops 1% below its nominal value. Tests are done at 0.5A and 3A. Note 8: Guaranteed by design and correlation to other tests, but not tested. The power transistor looks basically like a pure resistance in this range Note 9: TJMIN = –55°C for the RH1185AMK. Power transistor area and so that minimum differential at any intermediate current can be calculated control circuit area have different maximum junction temperatures. Control by interpolation; VDROPOUT = 0.25V + 0.25Ω • IOUT . For load current other area limit is TJMAX = 150°C for the RH1185AMK. Power area limit is 175°C than 0.5A and 3.0A, see graph in LT1185 data sheet. for RH1185AMK. Note 4: “Minimum input voltage” is limited by base emitter voltage drive Note 10: VSAT is the maximum specified dropout voltage; of the power transistor section, not saturation as measured in Note 3. For 0.25V + 0.25Ω • IOUT . output voltages below 4V, “minimum input voltage” specification may limit Note 11: Current limit is programmed with a resistor from REF pin to GND dropout voltage before transistor saturation limitation. pin. The value is 15k • A/I-limit. Note 5: Supply current is measured on the ground pin, and does not Note 12: For V include load current, R IN – VOUT = 1.5V, VIN = 5V and VOUT = 3.5V. For all other LIM, or output divider current. current limit tests, VOUT = 1.0V rh1185amkfa 3 Document Outline Description Electrical Characteristics
