Datasheet BC846DS (NXP) - 3

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NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor Table 5. Limiting values
…continued In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Tj junction temperature - 150 °C Tamb ambient temperature −55 +150 °C Tstg storage temperature −65 +150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 006aab621 500 Ptot (mW) 400 300 200 100 0−75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curve SOT457 (SC-74) 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor
Rth(j-a) thermal resistance from in free air [1] - - 500 K/W junction to ambient Rth(j-sp) thermal resistance from - - 250 K/W junction to solder point
Per device
Rth(j-a) thermal resistance from in free air [1] - - 328 K/W junction to ambient [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 3 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents