Datasheet BC846DS (NXP) - 6

NXP Semiconductors BC846DS 65 V, 100 mA NPN/NPN general-purpose transistor
006aaa536 006aaa534 1 1.3 VBEsat (V) VBE 1.1 (V) 0.8 0.9 (1) 0.7 (2) (3) 0.6 0.5 0.3 0.4 0.1 10−1 103 102 1 10 10−1 103 102 1 10 IC (mA) IC (mA) VCE = 5 V; Tamb = 25 °C IC/IB = 20 (1) Tamb = −55 °C (2) Tamb = 25 °C (3) Tamb = 100 °C
Fig 5. Per transistor: Base-emitter voltage as a Fig 6. Per transistor: Base-emitter saturation voltage function of collector current; typical values as a function of collector current; typical values
006aaa535 006aaa537 10 103 VCEsat (V) fT (MHz) 1 102 10−1 (1) (2) (3) 10−2 10 10−1 103 102 1 10 1 102 10 IC (mA) IC (mA) IC/IB = 20 VCE = 5 V; Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C
Fig 7. Per transistor: Collector-emitter saturation Fig 8. Per transistor: Transition frequency as a voltage as a function of collector current; function of collector current; typical values typical values
BC846DS_1 © NXP B.V. 2009. All rights reserved.
Product data sheet Rev. 01 — 17 July 2009 6 of 12
Document Outline 1. Product profile 1.1 General description 1.2 Features 1.3 Applications 1.4 Quick reference data 2. Pinning information 3. Ordering information 4. Marking 5. Limiting values 6. Thermal characteristics 7. Characteristics 8. Test information 8.1 Quality information 9. Package outline 10. Packing information 11. Soldering 12. Revision history 13. Legal information 13.1 Data sheet status 13.2 Definitions 13.3 Disclaimers 13.4 Trademarks 14. Contact information 15. Contents