Datasheet BC846ALT1G (ON Semiconductor) - 10
| Производитель | ON Semiconductor |
| Описание | NPN Bipolar Transistor |
| Страниц / Страница | 13 / 10 — BC846ALT1G Series. BC847C, BC848C, BC849C, BC850C, SBC847C. Figure 33. … |
| Версия | 17 |
| Формат / Размер файла | PDF / 111 Кб |
| Язык документа | английский |
BC846ALT1G Series. BC847C, BC848C, BC849C, BC850C, SBC847C. Figure 33. Collector Saturation Region
Модельный ряд для этого даташита
Текстовая версия документа
BC846ALT1G Series BC847C, BC848C, BC849C, BC850C, SBC847C
2.0 1.0 C) TA = 25°C ° -55°C to +125°C 1.2 TAGE (V) 1.6 (mV/ IC = 200 mA 1.6 1.2 I I I C = C = C = 50 mA IC = 100 mA COEFFICIENT 2.0 10 mA 20 mA OR-EMITTER VOL 0.8 TURE 2.4 0.4 , COLLECT 2.8 CE , TEMPERA V VBθ 0 0.02 0.1 1.0 10 20 0.2 1.0 10 100 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 33. Collector Saturation Region Figure 34. Base−Emitter Temperature Coefficient
10 400 (MHz) 300 7.0 TA = 25°C 200 5.0 Cib V ANCE (pF) 100 CE = 10 V 3.0 T 80 A = 25°C ACIT Cob 60 2.0 C, CAP 40 30 1.0 20 T 0.4 0.6 0.8 1.0 2.0 4.0 6.0 8.0 10 20 40 f, CURRENT-GAIN - BANDWIDTH PRODUCT 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mAdc)
Figure 35. Capacitances Figure 36. Current−Gain − Bandwidth Product www.onsemi.com 10
