Datasheet BRT11, BRT12, BRT13 (Vishay) - 2

BRT11, BRT12, BRT13
www.vishay.com Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT
Reverse voltage VR 6 V Forward current IF 20 mA Surge forward current IFSM 1.5 A Power dissipation t ≤ 10 μs Pdiss 30 mW
OUTPUT
BRT11 VDRM 400 V Repetitive peak off-state voltage BRT12 VDRM 600 V BRT13 VDRM 800 V RMS on-state current ITRMS 300 mA Single cycle surge current 50 Hz ITSM 3 A Power dissipation Pdiss 600 mW
COUPLER
Maximum power dissipation Ptot 630 mW Reference voltage in accordance V with VDE 0110 b ref 500 VRMS Reference voltage in accordance V with VDE 0110 b (insulation group C) ref 600 VDC Storage temperature range Tstg -40 to +150 °C Ambient temperature range Tamb -40 to +100 °C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability (1) Test AC voltage in accordance with DIN 57883, June 1980
ELECTRICAL CHARACTERISTICS
(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT INPUT
Forward voltage IF = 10 mA VF - 1.1 1.35 V Reverse current VR = 6 V IR - - 10 μA Thermal resistance, junction to ambient (1) RthJA - - 750 °C/W
OUTPUT
BRT11 - 400 - μA Peak off-state voltage ID(RMS) = 100 μA BRT12 VDM - 600 - μA BRT13 - 800 - μA Off-state current TC = 80 °C, VDRM ID - 0.5 100 μA On-state voltage IT = 300 mA VT - - 2.3 V Pulse current tp ≤ 5 μs, f = 100 Hz, dItp/dt ≤ 8 A/μs Itp - - 2 A VD = 0.67 VDRM, Tj = 25 °C dV/dtcr 10 - - kV/μs Critical rate of rise of off-state voltage VD = 0.67 VDRM, Tj = 80 °C dV/dtcr 5 - - kV/μs VD = 0.67 VDRM, Tj = 25 °C, dV/dtcrq 10 - - kV/μs Critical rate of rise of voltage at dI/dtcrq ≤ 15 A/ms current commutation VD = 0.67 VDRM, Tj = 80 °C, dV/dt dI/dt crq 5 - - kV/μs crq ≤ 15 A/ms Critical rate of rise of on-state dI/dt at current cr 8 - - A/μs Holding current VD = 10 V IH - 80 500 μA Thermal resistance, junction to ambient RthJA - - 125 °C/W Rev. 1.8, 14-Jul-2021
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