BPV11Fwww.vishay.com Vishay Semiconductors 200 160 120 RthJA 80 - Power Dissipation (mW) V 40 P 0 0 20 40 60 80 100 T 94 8300 amb - Ambient Temperature (°C) Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS(Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNITCollector emitter breakdown voltage IC = 1 mA V(BR)CEO 70 V Collector emitter dark current VCE = 10 V, E = 0 ICEO 1 50 nA DC current gain VCE = 5 V, IC = 5 mA, E = 0 hFE 450 Collector emitter capacitance VCE = 0 V, f = 1 MHz, E = 0 CCEO 15 pF Collector base capacitance VCE = 0 V, f = 1 MHz, E = 0 CCBO 19 pF Collector light current Ee = 1 mW/cm2, = 950 nm, VCB = 5 V Ica 3 9 mA Angle of half sensitivity ± 15 deg Wavelength of peak sensitivity p 930 nm Range of spectral bandwidth 0.5 900 to 980 nm Collector emitter saturation voltage Ee = 1 mW/cm2, = 950 nm, IC = 1 mA VCEsat 130 300 mV Turn-on time VS = 5 V, IC = 5 mA, RL = 100 ton 6 μs Turn-off time VS = 5 V, IC = 5 mA, RL = 100 toff 5 μs Cut-off frequency VS = 5 V, IC = 5 mA, RL = 100 fc 110 kHz
BASIC CHARACTERISTICS(Tamb = 25 °C, unless otherwise specified) 104 2.0 1.8 V = 5 V 103 CE 1.6 E = 1 mW/cm2 e λ = 950 nm V = 10 V CE 1.4 102 1.2 1.0 101 - Collector Dark Current (nA) - Relative Collector Current 0.8 I CEO I ca rel 10 0.6 20 40 60 80 100 0 20 40 60 80 100 94 8249 Tamb - Ambient Temperature (°C) 94 8239 Tamb - Ambient Temperature (°C) Fig. 2 - Collector Dark Current vs. Ambient Temperature Fig. 3 - Relative Collector Current vs. Ambient Temperature Rev. 1.6, 03-May-13
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