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Datasheet S112S01, S112S02, S116S01, S116S02, S212S01, S212S02, S216S01, S216S02 (Sharp) - 2

ПроизводительSharp
ОписаниеSIP Type SSR for Medium Power Control
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S112S01 Series/S116S01 Series. Absolute Maximum Ratings. S112S01 Series. S116S01 Series. S112S01 / S112S02. S116S01 / S116S02

S112S01 Series/S116S01 Series Absolute Maximum Ratings S112S01 Series S116S01 Series S112S01 / S112S02 S116S01 / S116S02

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S112S01 Series/S116S01 Series

Absolute Maximum Ratings
(Ta = 25˚C ) Parameter Symbol Rating Unit Forward current IF 50 mA Input Reverse voltage VR 6 V RMS ON-state
S112S01 Series
*412 A rms I current T
S116S01 Series
*516 A rms *1 AC 60Hz sine wave, Tj = 25˚C *1 Peak one cycle
S112S01 Series
120 A start I surge surge current
S116S01 Series
160 A *2 AC 60Hz for 1 minute, 40 to 60
S112S01 / S112S02
% RH. Apply voltages between Repetitive peak
S116S01 / S116S02
400 V Output V input and output by the OFF-state voltage DRM
S212S01 / S212S02 S216S01 / S216S02
600 V dielectric withstand voltage
S112S01 / S112S02
Non-repetitive peak tester with zero-cross circuit.
S116S01 / S116S02
400 V V ( Input and output shall be short- OFF-state voltage DSM
S212S01 / S212S02 S216S01 / S216S02
600 V ed respectively ) . Critical rate of rise of ON-state current dI/dt 50 A/µ s ( Note ) Operating frequency f 45 to 65 Hz When the isolation voltage is necessary at using external *2 Isolation voltage Viso 4 000 V rms heat sink, please use the in- Operating temperature Topr - 25 to + 100 ˚C sulation sheet. Storage temperature T *3 For 10 seconds stg - 30 to + 125 ˚C *4 T *3 C<= 70˚C Soldering temperature Tsol 260 ˚C *5 TC<=60˚C ■
Electrical Characteristics
(Ta = 25˚C ) Parameter Symbol Conditions MIN. TYP. MAX. Unit Forward voltage V F IF = 20mA - 1.2 1.4 V Input Reverse current IR V R = 3V - - 10- 4 A Repetitive peak OFF-state current I DRM V D = V DRM - - 10- 4 A
S112S01 Series
Resistance load - - 1.5 V rms ON-state voltage V IF = 20mA, IT = 12Arms T
S116S01 Series
Resistance load I - - 1.5 V rms F = 20mA, IT = 16Arms Holding current IH - - - 50 mA Output Critical rate of rise of OFF-state voltage dV/dt V D = 2/3 • V DRM 30 - - V/µ s Critical rate of rise of commutating ( dV/dt )C T j = 125˚C, VD = 400V , *6 5 - - V/µ s OFF-state voltage Zero-cross voltage
S112S02 / S212S02 S116S02 / S216S02
V OX IF = 8mA - - 35 V Minimum trigger
S112S01 / S212S01
V D = 12V, R L= 30
S116S01 / S216S01
Ω - - 8 mA I FT current
S112S02 / S212S02 S116S02 / S216S02
V D = 6V, R L= 30 Ω - - 8 mA Transfer Isolation resistance R ISO DC500V, RH = 40 to 60 % 1010 - - Ω charac-
S112S01 / S212S01 S116S01 / S216S01
- - 1 ms teristics Turn-on time t on AC 50Hz
S112S02 / S212S02 S116S02 / S216S02
- - 10 ms Turn-off time t off AC 50Hz - - 10 ms Thermal resistance
S112S01 series
- - 3.8 - ˚C/W ( Between junction and case) R th(j - c)
S116S01 series
- - 3.3 - ˚C/W Thermal resistance ( Between junction and ambience ) R th(j - a) - - 40 - ˚C/W *6
S112S01 Series
: dI T /dt = - 6A/ms
S116S01 Series
: dI T /dt = - 8A/ms
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