Datasheet LS914B - Multicomp Даташит Диод, HIGH SPEED, QUADRO MELF — Даташит
Наименование модели: LS914B
Диоды - общего назначения, управление питанием, коммутация 500mw switching diode | |||
| LS914B L1 Taiwan Semiconductor | 1.17 ₽ | ||
| LS914B Taiwan Semiconductor | по запросу | ||
Подробное описание
Производитель: Multicomp
Описание: Диод, HIGH SPEED, QUADRO MELF
Скачать Data SheetКраткое содержание документа:
LS4448.4148.914B
Features:
· · · · · · · · · Fast switching device (TRR<4.0nS).
Quadro mini-MELF package. Surface device type mounting. Hermetically sealed glass. Compression bonded construction. All external surfaces are corrosion resistant and leads are readily solderable. RoHs compliant. Matte tin (Sn) lead finish. 1st band indicates cathode.
Maximum Ratings at Electrical Characteristics
Rating at 25°C ambient temperature unless otherwise specified. Type Number Power Dissipation Working Inverse Voltage Non-repetitive Peak Forward Current Average Rectified Current Peak Forward Surge Current Operating Junction Temperature Storage Temperature Range Symbol Pd WIV IFM IO IFSURGE TJ TSTG Value 500 75 450 150 2 175 -65 to +200 Units mW V mA A °C °C
Спецификации:
- Diode Type: Small Signal
- Forward Current If(AV): 150 мА
- Repetitive Reverse Voltage Vrrm Max: 75 В
- Forward Voltage VF Max: 1 В
- Reverse Recovery Time trr Max: 4 нс
- Forward Surge Current Ifsm Max: 2 А
- Тип корпуса: SOD-80
- SVHC: No SVHC (19-Dec-2011)
- Current If @ Vf: 100 мА
- Current Ifsm: 2 А
- Current Ir Max: 25 нА
- Температура перехода максимальная: 175°C
- Power Disspation Pd @ Tc = 25C Max: 500 мВт
- Способ монтажа: SMD
- Vr Ir Measurement Voltage: 20 В
RoHS: есть
