Datasheet MUN5313DW1T1G - ON Semiconductor Даташит BRT транзистор, 50 В, 47K/47KOHM, SC88 — Даташит
Наименование модели: MUN5313DW1T1G
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Подробное описание
Производитель: ON Semiconductor
Описание: BRT транзистор, 50 В, 47K/47KOHM, SC88
Краткое содержание документа:
MUN5311DW1T1G Series Dual Bias Resistor Transistors
Preferred Devices
NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium.
Features
Спецификации:
- Полярность транзистора: NPN & PNP
- Collector Emitter Voltage V(br)ceo: 50 В
- Рассеиваемая мощность: 187 мВт
- DC Collector Current: -100 мА
- DC Current Gain: 140
RoHS: есть