Datasheet Vishay SI1012CR-T1-GE3 — Даташит

Si1012CR
Vishay Siliconix N-Channel 20 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (пЃ—) ID (mA) 0.396 at VGS = 4.5 V 600 0.456 at VGS = 2.5 V 500 0.546 at VGS = 1.8 V 350 1.100 at VGS = 1.5 V 50 Qg (Typ.) 0.75 TrenchFETВ® Power MOSFET: 1.2 V Rated
100 % Rg Tested
Gate-Source ESD Protected: 1000 V
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912 APPLICATIONS Load/Power Switching for Portable Devices Drivers: Relays, Solenoids, Lamps, Hammers, Displays,
Memories Battery Operated Systems Power Supply Converter Circuits SC-75A
G 1 3 S D 2 Marking Code: K
Top View Ordering Information:
Si1012CR-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 В°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Symbol
VDS
VGS Continuous Drain Current (TJ = 150 В°C)a
Pulsed Drain Current (t = 300 Вµs)
Continuous Source-Drain Diode Current
Maximum Power Dissipationa TA = 25 В°C
TA = 70 В°C …