Datasheet Vishay SI4403CDY-T1-GE3 — Даташит

New Product Si4403CDY
Vishay Siliconix P-Channel 1.8 V (G-S) MOSFET
FEATURES PRODUCT SUMMARY
RDS(on) (пЃ—) ID (A)d 0.0155 at VGS = -4.5 V -13.4 VDS (V)
-20 0.0195 at VGS = -2.5 V -12 0.0250 at VGS = -1.8 V -10.5 Halogen-free According to IEC 61249-2-21
Definition TrenchFETВ® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC Qg (Typ.)
36.5 nC APPLICATIONS Adaptor Switch High Current Load Switch Notebook SO-8
S 1 8 D S 2 7 D S 3 6 D G 4 5 D S G Top View D Ordering Information: Si4403CDY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 В°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current (TJ = 150 В°C) Symbol
VDS
VGS
TC = 25 В°C
TC = 70 В°C
TA = 25 В°C
TA = 70 В°C Pulsed Drain Current Limit
-20
В±8 IDM
TC = 25 В°C
TA = 25 В°C IS Avalanche Current
Single-Pulse Avalanche Energy L = 0.1 mH IAS
EAS Maximum Power Dissipation TC = 25 В°C …