Datasheet NXP PMV65XP — Даташит

PMV65XP 20 V, single P-channel Trench MOSFET
12 February 2013 Product data sheet 1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology. 2. Features and benefits
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• Low threshold voltage
Low on-state resistance
Trench MOSFET technology 3. Applications
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• Low power DC-to-DC converters
Load switching
Battery management
Battery powered portable equipment 4. Quick reference data
Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C -20 V VGS gate-source voltage -12 -12 V ID drain current VGS = -4.5 V; Tsp = 25 °C -4.3 A VGS = -4.5 V; ID = -2.8 A; Tj = 25 °C -58 74 mΩ Static characteristics
RDSon drain-source on-state
resistance PMV65XP Nexperia 20 V, single P-channel Trench MOSFET 5. Pinning information
Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol
D 3 G 1 2
S TO-236AB (SOT23) 017aaa257 6. Ordering information …