Datasheet NTE292MCP - NTE Electronics Даташит Транзистор, NPN & PNP, 120 В, 4 А, MCP — Даташит
Наименование модели: NTE292MCP
Silicon Complementary Transistors Medium Power Amp, Switch | |||
NTE292MCP NTE Electronics | по запросу |
Подробное описание
Производитель: NTE Electronics
Описание: Транзистор, NPN & PNP, 120 В, 4 А, MCP
Краткое содержание документа:
NTE291 (NPN) & NTE292 (PNP) Silicon Complementary Transistors Medium Power Amp, Switch
Description: The NTE291 (NPN) and NTE292 (PNP) are GeneralPurpose MediumPower silicon complementary transistors in a TO220 type package designed for switching and amplifier applications.
They are especially designed for series and shunt regulators and as a driver and output stage of highfidelity amplifiers. Features: D Low Saturation Voltage Absolute Maximum Ratings: CollectortoBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V CollectortoEmitter Voltage (RBB = 100, VBB = 0), VCEX . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130V CollectortoEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V EmitterToBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Спецификации:
- Collector Emitter Voltage V(br)ceo: 120 В
- DC Collector Current: 4 А
- DC Current Gain: 2
- Полярность транзистора: NPN & PNP
- Рабочий диапазон температрур: -65°C ... +150°C
- Рассеиваемая мощность: 40 Вт