Радиолоцман Электроника en
расширенный поиск +
  

Datasheet International Rectifier IRF530NSTRR

ПроизводительInternational Rectifier
СерияIRF530NS, IRF530NL
МодельIRF530NSTRR

Leaded 100 V Single N-Channel HEXFET Power MOSFET in a D2-Pak package. PB-IRF530NS. Obsolete

Datasheets

  • Скачать » Datasheet, PDF, 628 Кб
    Выписка из документа ↓
    PD - 91352B HEXFET Power MOSFET
    l l l l l l IRF530NS IRF530NL ®
    VDSS = 100V RDS(on) = 90m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 17A Description
    Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
    The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. D2Pak IRF530NS TO-262 IRF530NL Absolute Maximum Ratings
    Parameter
    ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max.
    17 12 60 3.8 70 0.47 ± 20 9.0 7.0 7.4 -55 to + 175 300 (1.6mm from case ) Units
    A W W W/°C V A mJ V/ns °C Thermal Resistance
    Parameter
    RJC RJA Junction-to-Case Junction-to-Ambient (PCB Mounted,steady-state)** Typ.
    ­­­ ­­­ Max.
    2.15 40 Units
    °C/W www.irf.com 1
    09/04/02 IRF530NS/IRF530NL
    Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
    V(BR)DSS
    V(BR)DSS/TJ RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss EAS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Single Pulse Avalanche E ...

Цены

    МОП-транзистор N-Chan 100V 9.2 Amp
    ПоставщикНаименованиеЦена
    КремнийIRF530NSTRRпо запросу
    LifeElectronicsIRF530NSTRRпо запросу
    ЭлектроПласт - ЕкатеринбургIRF530N-STRRпо запросу
    Подробнее об условиях поставки »

Выписка из документа:
PD - 91352B HEXFET Power MOSFET
l l l l l l IRF530NS IRF530NL ®
VDSS = 100V RDS(on) = 90m Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D G S ID = 17A Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRF530NL) is available for low-profile applications. D2Pak IRF530NS TO-262 IRF530NL Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Dera...

Модельный ряд

Серия: IRF530NS, IRF530NL (4)

Классификация производителя

  • Obsolete Leaded (Pb) N-Channel MOSFETs

На английском языке: Datasheet International Rectifier IRF530NSTRR

Рекомендуемые материалы по теме:

При перепечатке материалов с сайта прямая ссылка на РадиоЛоцман обязательна.

Приглашаем авторов статей и переводов к публикации материалов на страницах сайта.

Срезы ↓
Датчики влажности и температуры ДВТ-03
Датчики влажности и температуры ДВТ-03
Цена: от 3 168 руб.
Доставка: Россия и страны СНГ
Осциллограф Rohde Schwarz RTB2002
Осциллограф Rohde&Schwarz RTB2002
2 канала, 70 МГц, память 20 Мб, частота дискретизации 2,5 ГГц. Емкостной цветной сенсорный, диагональю 10.1 дюймов
Цена: от 128 тыс. руб.
Доставка: Россия и страны СНГ
DC-DC повышающий регулируемый преобразователь питания на MT3608
DC-DC регулируемый преобразователь питания
на MT3608
Входное напряжение: 2В-24В
Выходное напряжение: 4В-28В
Входной ток: 2А
Цена: от 22 руб.
Доставка: Весь мир / Россия
радиолоцман вконтакте радиолоцман одноклассники радиолоцман facebook радиолоцман twitter радиолоцман google плюс

Рейтинг@Mail.ru