Радиолоцман Электроника en
расширенный поиск +
  

Datasheet Fairchild FQP13N10

Datasheet Fairchild FQP13N10

ПроизводительFairchild
СерияFQP13N10
МодельFQP13N10

N-Channel QFET MOSFET 100 V, 12.8 A, 180 mΩ

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.

Datasheets

  • Скачать » Datasheet, PDF, 677 Кб
    Выписка из документа ↓
    FQP13N10 -N-Channel QFET® MOSFET November 2013 FQP13N10
    N-Channel QFET® MOSFET
    100 V, 12.8 A, 180 m Description
    This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features 12.8 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V, ID= 6.4 A Low Gate Charge (Typ. 12 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating D GD S G TO-220
    S Absolute Maximum Ratings
    Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted. Parameter Drain-Source Voltage -Continuous (TC = 25°C) Drain Current -Continuous (TC = 100°C) Drain Current -Pulsed
    (Note 1) FQP13N10 100 12.8 9.05 51.2 ± 25
    (Note 2) (Note 1) (Note 1) (Note 3) Unit V A A A V mJ A mJ V/ns W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) -Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 seconds 95 12.8 6.5 6.0 65 0.43 -55 to +175 300 Thermal Characteristics
    Symbol RJC RJA Parameter Thermal Resistance, Junction-to-Case, Max. Thermal Resistance, Junction-to-Ambient, Max. FQP13N10 2.31 62.5 Unit °C/W °C/W ©2000 Fairchild Semiconductor Corporation FQP13N10 Rev. C1 1 www.fairchildsemi.com FQP13N10 -N-Channel QFET® MOSFET Marking and Ordering Information
    Part Number FQP13N10 Top Mark FQP13N10 Package TO-220 Packing Method Tube Reel Size N/A Tape Width N/A Quantity 50 units Electrical Characteristics
    Symbol Parameter TC = 25°C unless otherwise noted. Test Conditions Min Typ Max Unit Off Characteristics
    BVDSS BVDSS / TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse VGS = 0 V, ID = 250 A ID = 250 A, Referenced to 25°C VDS = 100 V, VGS = 0 V VDS = 80 V, TC = 150°C VGS = 25 V, VDS = 0 V VGS = -25 V, VDS = 0 V 100 --0.09 --1 10 100 -100 V V/°C A A nA nA On Characteristics
    VGS(th) RDS(on) gFS Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = 250 A VGS = 10 V, ID = 6.4 A VDS = 40 V, ID = 6.4 A 2.0 ...

Цены

    FQP13N10 на РадиоЛоцман.Цены — от 0,11 до 66,00 руб.
    Trans MOSFET N-CH 100V 12.8A 3-Pin(3+Tab) TO-220AB Rail
    Цена FQP13N10
    ПоставщикПроизводительНаименованиеЦена
    5 элементCR16-3010-FK0,11 руб.
    AliExpress5 ШТ. FQP13N10L FQP13N10 13N10 TO-2202,42 руб.
    PL-113N10 (FQP13N10)от 37,80 руб.
    ДКО ЭлектронщикON SemiconductorFQP13N10Lпо запросу
    ЭлектроПласт - ЕкатеринбургFairchildFQP13N10*по запросу
    Все 20 предложений от 14 поставщиков »

Выписка из документа:
FQP13N10 -N-Channel QFET® MOSFET November 2013 FQP13N10
N-Channel QFET® MOSFET
100 V, 12.8 A, 180 m Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor's proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features 12.8 A, 100 V, RDS(on) = 180 m (Max.) @ VGS = 10 V, ID= 6.4 A Low Gate Charge (Typ. 12 nC) Low Crss (Typ. 20 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating D GD S G TO-220
S Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise n...

Классификация производителя

  • Discretes > FETs > MOSFETs

На английском языке: Datasheet Fairchild FQP13N10

Рекомендуемые материалы по теме:

При перепечатке материалов с сайта прямая ссылка на РадиоЛоцман обязательна.

Приглашаем авторов статей и переводов к публикации материалов на страницах сайта.

Срезы ↓
Датчики влажности и температуры ДВТ-03
Датчики влажности и температуры ДВТ-03
Цена: от 3 168 руб.
Доставка: Россия и страны СНГ
Ультразвуковой датчик расстояния HC-SR04
Ультразвуковой датчик расстояния HC-SR04
Для проектов на Arduino и др.
Не зависит от освещенности и цвета объекта.
Цена: от 40 руб.
Доставка: Весь мир / Россия
DC-DC повышающий регулируемый преобразователь питания на MT3608
DC-DC регулируемый преобразователь питания
на MT3608
Входное напряжение: 2В-24В
Выходное напряжение: 4В-28В
Входной ток: 2А
Цена: от 22 руб.
Доставка: Весь мир / Россия
радиолоцман вконтакте радиолоцман одноклассники радиолоцман facebook радиолоцман twitter радиолоцман google плюс

Рейтинг@Mail.ru