Datasheet Vishay SiHF530-GE3 — Даташит

IRF530, SiHF530
Vishay Siliconix Power MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) 100 RDS(on) (пЃ—) VGS = 10 V 0.16 Qg (Max.) (nC) 26 Qgs (nC) 5.5 Qgd (nC) 11 Configuration Single Dynamic dV/dt Rating
Repetitive Avalanche Rated
175 В°C Operating Temperature
Fast Switching
Ease of Paralleling
Simple Drive Requirements
Compliant to RoHS Directive 2002/95/EC Available RoHS*
COMPLIANT D DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220AB package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 W. The low thermal resistance
and low package cost of the TO-220AB contribute to its
wide acceptance throughout the industry. G G D S
S
N-Channel MOSFET ORDERING INFORMATION
Package TO-220AB
IRF530PbF …