Datasheet Power Integrations LQA10T150C

Производитель	Power Integrations
Серия	LQA10T150C, LQA10N150C
Модель	LQA10T150C

Qspeed Family 150 V, 10 A Common-Cathode Diode

Datasheets

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LQA10T150C, LQA10N150C QspeedTM Family
150 V, 10 A Common-Cathode Diode Product Summary
IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 5 150 21.4 1.41 0.59 A V nC A General Description
This device has the lowest QRR of any 150 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Motor drive circuits DC-AC inverters Pin Assignment Features Low QRR, Low IRRM, Low tRR High dIF/dt capable Soft recovery TO-220AB
LQA10T150C TO-252 DPAK
A1 A2
LQA10N150C Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size and count Enables extremely fast switching K RoHS Compliant
Package uses Lead-free plating and "Green" mold compound Halogen free per IEC 61249-2-21. Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol
VRRM IF(AVG) IFSM IFSM TJ TSTG PD Parameter
Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Operating junction temperature range Storage temperature Lead soldering temperature Power dissipation Conditions
TJ = 25 °C Per Diode, TJ = 150 °C, TC = 130 °C Per Device, TJ = 150 °C, TC = 130 °C Per Diode, 60 Hz, Ѕ cycle Per Diode, Ѕ cycle of t = 28 µs Sinusoid, TC = 25 °C Rating
150 5 10 60 350 55 to 150 55 to 150 300 27.7 Units
V A A A A °C °C °C W Leads at 1.6mm from case, 10 sec TC = 25 °C Thermal Resistance
Symbol
RJA RJC Resistance from:
Junction to ambient Junction to case Conditions
TO-220AB (only) Per Diode Per Device Rating
62 4.5 2.3 Units
°C/W °C/W °C/W www.power.com January 2015 LQA10T150C, LQA10N150C Electrical Specifications at TJ = 25 °C (unless otherwise specified)
Symbol
IR VF CJ Parameter
Reverse current per diode Forward voltage per diode Junction capacitance per diode Reverse recovery time, per diode Reverse recovery charge, per diode Maximum reverse recovery current, per diode Conditions ...

Цены

LQA10T150C на РадиоЛоцман.Цены — от 53,10 до 72,81 руб.

Быстрый / ультрабыстрый диод, Qspeed, 150 В, 10 А, Общий Катод, 1.1 В, 15.1 нс, 60 А

Поставщик	Производитель	Цена
Элитан	Power Integrations	53,10 руб.
5 элемент	Power Integrations	от 72,81 руб.
T-electron	Power Integrations	по запросу
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LQA10T150C, LQA10N150C QspeedTM Family
150 V, 10 A Common-Cathode Diode Product Summary
IF(AVG) per diode VRRM QRR (Typ at 125 °C) IRRM (Typ at 125 °C) Softness tb/ta (Typ at 125 °C) 5 150 21.4 1.41 0.59 A V nC A General Description
This device has the lowest QRR of any 150 V Silicon diode. Its recovery characteristics increase efficiency, reduce EMI and eliminate snubbers. Applications AC/DC and DC/DC output rectification Output and freewheeling diodes Motor drive circuits DC-AC inverters Pin Assignment Features Low QRR, Low IRRM, Low tRR High dIF/dt capable Soft recovery TO-220AB
LQA10T150C TO-252 DPAK
A1 A2
LQA10N150C Benefits Increases efficiency Eliminates need for snubber circuits Reduces EMI filter component size and count Enables extremely fast switching K RoHS Compliant
Package uses Lead-free plating and "Green" mold compound Halogen free per IEC 61249-2-21. Absolute Maximum Ratings
Absolute maximum ratings are the values beyond which the device may be damaged or have its useful life impaired. Functional operation under these conditions is not implied. Symbol
VRRM IF(AVG) IFSM IFSM TJ TSTG PD Parameter
Peak repetitive reverse voltage Average forward current Non-repetitive peak surge current Non-repetitive peak surge current Operating junction temperature range Storage temperature Lead soldering temperature Power dissipation Conditions
TJ = 25 °C Per Diode, TJ = 150 °C, TC = 130 °C Per Device, TJ = 150 °C, TC = 130 °C Per Diode, 60 Hz, Ѕ cycle Per Diode, Ѕ cycle of t = 28 µs Sinusoid, TC = 25 °C Rating
150 5 10 60 350 55 to 150 55 to 150 300 27.7 Units
V A A A A °C °C °C W Leads at 1.6mm from case, 10 sec TC = 25 °C Thermal Resistance
Symbol
RJA RJC Resistance from:
Junction to ambient Junction to case Conditions
TO-220AB (only) Per Diode Per Device Rat...