Datasheet Rohm RB851YT2R — Даташит

RB851Y
Diodes Schottky barrier diode
RB851Y
Applications High frequency detection Dimensions (Unit : mm) Land size figure (Unit : mm)
0.5
0.22±0.05 0.13±0.05 (3) Features 1) Ultra small mold type. (EMD4) 2) Low Ct and high detection efficiency. 0.45 1.6±0.1 1.6±0.05 (4) 1.2±0.1 1.6±0.1 1.6±0.05 1.0
00.1 EMD4 (1) (2) 0.5 0.5±0.05 Construction Silicon epitaxial planar 0.5 1.0±0.1 Structure ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) Taping specifications (Unit : mm)
4.0±0.1 2.0±0.05 1.5±0.1 0 1.75±0.1 0.3±0.1 3.5±0.05 1.65±0.1 5.5±0.2 8.0±0.2 1.55
0.8±0.1 00.1 0.65±0.1 1.65±0.1 1.7±0.05 1PIN 4.0±0.1 Absolute maximum ratings (Ta=25°C)
Parameter Reverse voltage (DC) Forward current(DC)(*1) Junction temperature Storage temperature (*1)Rating of per diode Symbol VR IF Tj Tstg Limits 3 30 125 -40 to +125 Unit V mA Electrical characteristics (Ta=25°C)
Param eter Forward voltage Revers e current Capacitance between term inal Sym bol VF IR Ct Min. Typ. 0.8 Max. 0.46 0.7 Unit V µA pF IF =1m A VR =1V VR =0V , f=1MHz Conditions Rev.B 1.65±0.01 1/2 RB851Y
Diodes
Electrical characteristic curves (Ta=25°C)
10 FORWARD CURRENT:IF(mA) 1 Ta=125 10000 Ta=125 1000 Ta=75 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1 f=1MHz REVERSE CURRENT:IR(uA) 0.1 0.01 Ta=-25 Ta=25 Ta=75 Ta=25 Ta=-25 0.001 0.0001 0 100 200 300 400 500 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 700 10 1 0 1 2 3 4 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 5 0.1 0 1 2 3 4 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 5 410 FORWARD VOLTAGE:VF(mV) 400 390 380 370 AVE:389.3mV 360 VF DISPERSION MAP REVERSE CURRENT:IR(uA) Ta=25 IF=1mA n=30pcs 40 Ta=25 VR=1V n=30pcs 0.8 Ta=25 f=1MHz VR=0V n=10pcs 30 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 0.75 20 0.7 AVE:0.764pF 10 AVE:15.0uA 0 IR DISPERSION MAP 0.65 Ct DISPERSION MAP TRANSIENT THAERMAL IMPEDANCE:Rth (/W) 1000 ELECTROSTATIC DDISCHARGE TEST ESD(KV) Rth(j-a) 1.4 1.2 1 0.8 0.6 0.4 0.2 0
1000 C=200pF R=0 C=100pF R=1.5k AVE:0.53kV AVE:1.13kV Rth(j-c) 100 Mounted on epoxy board
IM=1mA IF=10mA 1ms time 10 0.001 300us 0.01 1 100 TIME:t(s) 10 Rth-t CHARACTERISTICS 0.1 ESD DISPERSION MAP Rev.B 2/2 Appendix Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are sh …