Datasheet NXP BAV99S,115 — Даташит

BAV99 series
High-speed switching diodes
Rev. 8 — 18 November 2010 Product data sheet 1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1. Product overview Type number Package Configuration Package
configuration NXP JEITA JEDEC BAV99 SOT23 -TO-236AB dual series small BAV99S SOT363 SC-88 -quadruple; 2 series very small BAV99W SOT323 SC-70 -dual series very small 1.2 Features and benefits
„ High switching speed: trr ≤ 4 ns
„ Low leakage current
„ Small SMD plastic packages „ Low capacitance: Cd ≤ 1.5 pF
„ Reverse voltage: VR ≤ 100 V
„ AEC-Q101 qualified 1.3 Applications
„ High-speed switching
„ General-purpose switching „ Reverse polarity protection 1.4 Quick reference data
Table 2.
Symbol Quick reference data
Parameter Conditions Min Typ Max Unit VR = 80 V -0.5 μA -100 V -4 ns Per diode
IR reverse current VR reverse voltage trr reverse recovery time [1] [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA. BAV99 series NXP Semiconductors High-speed switching diodes 2. Pinning information
Table 3. Pinning Pin Description Simplified outline Graphic symbol BAV99; BAV99W
1 anode (diode 1) 2 cathode (diode 2) 3 cathode (diode 1),
anode (diode 2) 3 3 1 2
006aaa144 1 2 …