Datasheet ON Semiconductor J309G — Даташит

J309, J310
Preferred Device JFET VHF/UHF Amplifiers
N-Channel -Depletion
Features Pb-Free Packages are Available*
MAXIMUM RATINGS
Rating Drain -Source Voltage Gate -Source Voltage Forward Gate Current Total Device Dissipation @ TA = 25°C Derate above = 25°C Junction Temperature Range Storage Temperature Range Symbol VDS VGS IGF PD TJ Tstg Value 25 25 10 350 2.8 -65 to +125 -65 to +150 Unit Vdc Vdc mAdc mW mW/°C °C °C http://onsemi.com
1 DRAIN 3 GATE 2 SOURCE Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1 2 3 TO-92 CASE 29-11 STYLE 5 MARKING DIAGRAM J3xx AYWW G G J3xx = Device Code xx = 09 or 10 A = Assembly Location Y = Year WW = Work Week G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. Preferred devices are recommended choices for future use and best overall value. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2006 1 March, 2006 -Rev. 1 Publication Order Number: J309/D J309, J310
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Gate -Source Breakdown Voltage (IG = -1.0 mAdc, VDS = 0) Gate Reverse Current (VGS = -15 Vdc, VDS = 0, TA = 25°C) (VGS = -15 Vdc, VDS = 0, TA = +125°C) Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) ON CHARACTERISTICS Zero -Gate -Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) Gate-Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) SMALL-SIGNAL CHARACTERISTICS Common-Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Gate Power Gain (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Gate Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Common-Source Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Gate Forward Transconductance (VDS = 10 Vdc, ID = 10 mAdc, f = 1.0 kHz) Common-Gate Output Condu …