MTW24N40E
Preferred Device Power MOSFET 24 Amps, 400 Volts
N-Channel TO-247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. Robust High Voltage Termination Avalanche Energy Specified Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode Diode is Characterized for Use in Bridge Circuits IDSS and VDS(on) Specified at Elevated Temperature Isolated Mounting Hole Reduces Mounting Hardware
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating Drain-Source Voltage Drain-Gate Voltage (RGS = 1.0 M) Gate-Source Voltage -Continuous -Non-Repetitive (tp 10 ms) Drain Current -Continuous Drain Current -Continuous @ 100°C Drain Current -Single Pulse (tp 10 µs) Total Power Dissipation Derate above 25°C Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -Starting TJ = 25°C (VDD = 100 Vdc, VGS = 10 Vdc, IL = 20 Apk, L = 3.0 mH, RG = 25 ) Thermal Resistance -Junction to Case Thermal Resistance -Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds Symbol VDSS VDGR VGS VGSM ID ID IDM PD TJ, Tstg EAS Value 400 400 ± 20 ± 40 24 17.7 72 250 2.0 -55 to 150 600 Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/°C °C mJ LL Y WW 1 Gate 2 Drain = Location Code = Year = Work Week 3 Source MTW24N40E LLYWW 1 2 3 http://onsemi.com 24 AMPERES 400 VOLTS RDS(on) = 160 m
N-Channel D G S 4 TO-247AE CASE 340K Style 1 MARKING DIAGRAM & PIN ASSIGNMENT
4 Drain RJC RJA TL 0.50 40 260 °C/W °C ORDERING INFORMATION
Device MTW24N40E Package TO-247 Shipping 30 Units/Rail Preferred devices are recommended choices for future use and best overall value. © Semiconductor Components Industries, LLC, 2000 1 September, 2000 -Rev. XXX Publication Order Number: MTW24N40E/D MTW24N40E
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 250 µAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain …
Купить MTW24N40E на РадиоЛоцман.Цены — от 527 до 1 438 ₽
