VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors Ultrafast Rectifier, 8 A FRED Pt®
FEATURES
Base cathode 2 Ultrafast recovery time Low forward voltage drop 175 °C operating junction temperature Low leakage current
Available Designed and qualified according to JEDEC®-JESD 47 Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 1 Cathode 3 Anode TO-220AC DESCRIPTION / APPLICATIONS PRODUCT SUMMARY
Package IF(AV) VR VF at IF trr typ. TJ max. Diode variation TO-220AC 8A 200 V 0.895 V See Recovery table 175 °C Single die VS-MUR820PbF is the state of the art ultrafast recovery rectifier specifically designed with optimized performance of forward voltage drop and ultrafast recovery time. The planar structure and the platinum doped life time control, guarantee the best overall performance, ruggedness and reliability characteristics. These devices are intended for use in the output rectification stage of SMPS, UPS, DC/DC converters as well as freewheeling diode in low voltage inverters and chopper motor drives. Their extremely optimized stored charge and low recovery current minimize the switching losses and reduce over dissipation in the switching element and snubbers. ABSOLUTE MAXIMUM RATINGS
PARAMETER Peak repetitive reverse voltage Average rectified forward current Non-repetitive peak surge current Peak repetitive forward current Operating junction and storage temperatures SYMBOL VRRM IF(AV) IFSM IFM TJ, TStg Rated VR, square wave, 20 kHz, TC = 150 °C Total device, rated VR, TC = 150 °C TEST CONDITIONS MAX. 200 8 100 16 -65 to +175 °C A UNITS V ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER Breakdown voltage, blocking voltage Forward voltage SYMBOL VBR, VR VF IR CT LS IR = 100 A IF = 8 A IF = 8 A, TJ = 150 °C VR = VR rated TJ = 150 °C, VR = VR rated VR = 200 V Measured lead to lead 5 mm from package body TEST CONDITIONS MIN. 200 TYP. 25 8.0 MAX. 0.975 0.895 5 250 A pF nH V UNITS Reverse leakage current Junction capacitance Series inductance Revision: 10-Jul-15 Document Number: 94523 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-MUR820PbF, VS-MUR820-N3
www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS IF = 1.0 A, dIF/dt = 50 A/s, VR = 30 V Rev …
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