IRFP31N50L, SiHFP31N50L
Vishay Siliconix Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 210 58 100 Single
D FEATURES
500 0.15 Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications Lower Gate Charge Results in Simpler Drive Requirements Available RoHS*
COMPLIANT Enhanced dV/dt Capabilities Offer Improved Ruggedness Higher Gate Voltage Threshold Offers Improved Noise Immunity Compliant to RoHS Directive 2002/95/EC TO-247AC APPLICATIONS
G Zero Voltage Switching SMPS Telecom and Server Power Supplies S D G S N-Channel MOSFET Uninterruptible Power Supplies Motor Control Applications ORDERING INFORMATION
Package Lead (Pb)-free SnPb TO-247AC IRFP31N50LPbF SiHFP31N50L-E3 IRFP31N50L SiHFP31N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw TC = 25 °C EAS IAR EAR PD dV/dt TJ, Tstg VGS at 10 V TC = 25 °C TC = 100 °C SYMBOL VDS VGS ID IDM LIMIT 500 ± 30 31 20 124 3.7 460 31 46 460 19 -55 to + 150 300d 10 1.1 W/°C mJ A mJ W V/ns °C lbf in N m A UNIT V Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 1 mH, Rg = 25 , IAS = 31 A (see fig. 12). c. ISD 31 A, dI/dt 422 A/s, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91220 S11-0488-Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP31N50L, SiHFP31N50L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SYMBOL RthJA RthCS RthJC TYP. 0.24 MAX. 40 0.26 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance …
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