Datasheet Microsemi 2N3811U — Даташит

TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336 DEVICES LEVELS 2N3810 2N3810L 2N3810U 2N3811 2N3811L 2N3811U JAN JANTX JANTV JANS ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Symbol VCEO VCBO VEBO IC One Section 1 Total Power Dissipation @ TA = +25°C PT TJ, Tstg 200 Value 60 60 5.0 50 Both Sections 2 350 mW °C Unit Vdc Vdc Vdc mAdc Operating & Storage Junction Temperature Range Note: 1. 2. -65 to +200 TO-78 Derate linearly 1.143mW/°C for TA > +25°C (one section) Derate linearly 2.00mW/°C for TA > +25°C (both sections) ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions OFF CHARACTERTICS Collector-Emitter Breakdown Voltage IC = 100Adc Collector-Base Cutoff Current VCB = 50Vdc VCB = 60Vdc Emitter-Base Cutoff Current VEB = 4.0Vdc VEB = 5.0Vdc V(BR)CEO 60 Vdc Symbol Min. Max. Unit ICBO 10 10 10 10 Adc Adc Adc Adc IEBO T4-LDS-0118 Rev. 1 (091095) Page 1 of 3 TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON DUAL TRANSISTOR
Qualified per MIL-PRF-19500 /336 ELECTRICAL CHARACTERISTICS (con't) Parameters / Test Conditions
ON CHARACTERTICS Forward-Current Transfer Ratio IC = 10Adc, VCE = 5.0Vdc IC = 100Adc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc IC = 1.0Adc, VCE = 5.0Vdc IC = 10Adc, VCE = 5.0Vdc IC = 100Adc, VCE = 5.0Vdc IC = 1.0mAdc, VCE = 5.0Vdc IC = 10mAdc, VCE = 5.0Vdc 2N3810, 2N3810L , 2N3810U hFE 100 150 150 125 450 450 Symbol Min. Max. Unit 2N3811, 2N3811L, 2N3811U hFE 75 225 300 300 250 900 900 Collector-Emitter Saturation Voltage IC = 100Adc, IB = 10Adc IC = 1.0mAdc, IB = 100Adc Base-Emitter Saturation Voltage IC = 100Adc, IB = 10Adc IC = 1.0mAdc, IB = 100Adc Base-Emitter Non-Saturation Voltage VCE = 5.0Adc, IC = 100Adc VBE 0.7 Vdc VBE(sat) 0.7 0.8 Vdc VCE(sat) 0.2 0.25 Vdc DYNAMIC CHARACTERISTICS
Forward Current Transfer Ratio, Magnitude IC = 500Adc, VCE = 5.0Vdc, f = 30MHz IC = 1.0mAdc, VCE = 5.0Vdc, f = 100MHz Small-Signal Short Circuit Forward Current Transfer Ratio IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short Circuit Input Impedance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz Small-Signal Short Circuit Output Admittance IC = 1.0mAdc, VCE = 10Vdc, f = 1.0kHz Output Capacitance VCB = 5.0Vdc, …