KSD1621 -NPN Epitaxial Silicon Transistor August 2009 KSD1621
NPN Epitaxial Silicon Transistor
Features High Current Driver Applications Low Collector-Emitter Saturation Voltage Large Current Capacity and Wide SOA Fast Switching Speed Complement to KSB1121 Marking 1 6 P Y
1 2 1 W W
Weekly code Year code hFE grade SOT-89 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings
Symbol
VCBO VCEO VEBO IC PC TJ TSTG Collector-Base Voltage TA = 25°C unless otherwise noted Parameter
Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation (TA = 25°C) Derating Rate above 25°C Junction Temperature Storage Temperature
2 Ratings
30 25 6 2 500 4 150 -55 to +150 Units
V V V A mW mW/°C °C °C Mounted on Ceramic Board (250mm x 0.8mm) © 2009 Fairchild Semiconductor Corporation KSD1621 Rev. B3 1 www.fairchildsemi.com KSD1621 -NPN Epitaxial Silicon Transistor Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 Parameter
Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Test Condition
IC = 10A, IE = 0 IE = 10A, IC = 0 VCB = 20V, IE = 0 VBE = 4V, IC = 0 VCE = 2V, IC = 0.1A VCE = 2V, IC = 1.5A IC = 1.5A, IB = 75mA IC = 1.5A, IB = 75mA VCE = 10V, IC = 50mA VCB = 10V, IE = 0, f = 1MHz VCC = 12V, VBE = 5V IB1 = -IB2 = 25mA IC = 0.5A, RL = 25 Min.
30 25 6 Typ. Max. Units
V V V Collector-Emitter Breakdown Voltage IC = 1mA, IB = 0 100 100 100 65 0.18 0.85 150 19 60 500 25 560 0.4 1.2 nA nA VCE (sat) Collector-Emitter Saturation Voltage VBE (sat) Base-Emitter Saturation Voltage fT Cob tON tSTG tF Current Gain Bandwidth product Output Capacitance Turn On Time * Storage Time * Fall Time * V V MHz pF ns ns ns hFE Classification
Classification
hFE R
100 ~ 200 S
140 ~ 280 T
200 ~ 400 U
280 ~ 560 Package Marking and Ordering Information …
