2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087
PNP General Purpose Amplifier This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA.
1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted
Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature -Continuous Value -50 -50 -3.0 -100 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted
Symbol Parameter Test Condition IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 VCB = -10V, IE = 0 VCB = -35V, IE = 0 VEB = -3.0V, IC = 0 IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = -10mA, IB = -1.0mA IC = -1.0mA, VCE = -5.0V IC = -500µA, VCE = -5.0V, f = 20MHz VCB = -5.0V, IE = 0, f = 100KHz IC = -1.0mA, VCE = -5.0V, f = 1.0KHz IC = -100µA, VCE = -5.0V RS = 3.0k, f = 1.0KHz IC = -20µA, VCE = -5.0V RS = 10k f = 10Hz to 15.7KHz
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0% Min. -50 -50 Max. Units V V Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO V(BR)CBO ICEO ICBO hFE Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain -10 -50 -50 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800 nA nA nA On Characteristics -0.3 -0.85 40 4.0 5086 5087 5086 5087 5086 5087 150 250 600 900 3.0 2.0 3.0 2.0 V V MHz pF Small Signal Characteristics dB dB dB dB ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Thermal Characteristics Ta=25°C unless otherwise noted
Max. Symbol PD RJC RJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5086 2N5087 625 5.0 83.3 200 357 *MMBT5087 350 2.8 Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1.6" Ч 1.6" Ч 0.06." ©2003 Fairchild Semiconductor Corporation Rev. B1, Septemb …
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