Datasheet Texas Instruments CSD25213W10 — Даташит

CSD25213W10
www.ti.com SLPS443 – JUNE 2013 P-Channel NexFET™ Power MOSFET
Check for Samples: CSD25213W10 FEATURES 1 PRODUCT SUMMARY Ultra Low Qg and Qgd
Small Footprint 1mm Г— 1mm
Low Profile 0.62mm Height
Pb Free
Gate-Source Voltage Clamp
Gate ESD Protection
RoHS Compliant
Halogen Free Drain to Source Voltage –20 V Qg Gate Charge Total (4.5V) 2.2 nC Qgd Gate Charge Gate to Drain RDS(on) Drain to Source On
Resistance VGS(th) Threshold Voltage 0.14 nC VGS = –2.5V 54 mΩ VGS = –4.5V 39 mΩ –0.85 V ORDERING INFORMATION APPLICATIONS VDS Battery Management
Load Switch
Battery Protection Device Package CSD25213W10 1 Г— 1 Wafer Level
Package Media
7-inch reel Qty Ship 3000 Tape and
Reel ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated VALUE UNIT VDS Drain to Source Voltage –20 V DESCRIPTION VGS Gate to Source Voltage –6.0 V The device has been designed to deliver the lowest
on resistance and gate charge in the smallest outline
possible with excellent thermal characteristics in an
ultra low profile. ID Continuous Drain Current,
TA = 25В°C(1) -1.6 A Top View G (2) IDM Pulsed Drain Current, TA = 25В°C -16 A IG Continuous Gate Clamp Current(3) -5 mA PD Power Dissipation(1) 1 W TJ, TSTG Operating Junction and Storage
Temperature Range –55 to 150 °C (1) RθJA = 75°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
(2) Pulse width ≤300Ојs, duty cycle ≤2% …